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10kV SiC MOSFET split output power module
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| Author(s) |
Szymon BECZKOWSKI |
| Abstract |
The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical half bridge and a split-output power module. It is found that the peak current during turn-on is reduced significantly, however some additional challenges arise during implementation. |
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| Filename: | 0601-epe2015-full-17583566.pdf |
| Filesize: | 1.449 MB |
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| Type |
Members Only |
| Date |
Last modified 2016-06-08 by System |
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