EPE Association: EPE 1997 – 26: Dialogue Session DS1b-1: SWITCHES

EPE 1997 – 26: Dialogue Session DS1b-1: SWITCHES - DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 26: Dialogue Session DS1b-1: SWITCHES - DEVICES

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   The Dual-Gated Emitter Switched Thyristor
By W.G. Min; S.C. Kim; J.M. Park; E.D. Kim; N.K. Kim [View]
[Download]

Abstract: New Dual-Gated EST(DGEST) is introduced which utilize separate gate control to improve the FBSOA and switching capability of conventional EST. The performance of the dual-gated EST have been simulated by commercial numerical device simulator to verify the characteristics with various structural parameters.

   Ultra high-ruggedness of 2.5 kV / 1kA Power Pack IGBT
By Yasukazu Seki; Masayuki Soutome; Y. Oshikazu-Takahashi; Koh Yoshikawa; Takeshi Fujii; Humiaki Kirihata [View]
[Download]

Abstract: An electrical and reliable ruggedness of 2.5kV / 1kA high power flat-packaged IGBT (Power Pack IGBT) has been irivestigated. Recently, IGBT is widely used for the industrial and traction inverter applications because of its easy controllability and wide SOA. Considering about next generation inverter systems, achieving high efficiency and reducing the total inverter system size is very important items. To realize above important items, the IGBT have to be used more severe conditions, such as high frequency, high temperature, and any terrible circumstances. In order to match theses severe conditions, we have developed the Power Pack IGBT and investigate the electrical and reliable ruggedness.

   PERFORMANCE COMPARISON OF STANDARD AND 0PTIMISED CLAMP DIODES FOR HIGH POWER IGBT INVERTERS FOR TRACTION APPLICATIONS
By F. Profumo; S. Facelli; A. Tenconi; B. Passerini; S. Fimiani; L. Fratelli [View]
[Download]

Abstract: In this paper the problem of overvoltages protection in high power IGBT inverters for traction applications is presented. The turn off operation of the voltage clamped IGBT inverters described. The capability of the clamp circuit in limiting the IGBT turn-off voltage spikes is analyzed and the importance of the clamp diode electrical characteristics are pointed out. Finally, experimental and simulated results allow a direct comparison between standard ultrafast clamp diodes and optimized clamp diodes.

   HIGH PERFORMANCE LOW COST MV A INVERTERS REALISED WITH INTEGRATED GATE COMMUTATED THYRISTORS (IGCT)
By H. E. Gruening, B. Odegard [View]
[Download]

Abstract: Following in the steps of thyristor and GTO, GCT-technology merges their attractive features with the strengths of bipolar transistors and IGBTs to achieve very low on-state at high blocking voltage, small switching loss, snubberless turn-off, fast and precise timing and high turn-off current (>4kA) per chip. By a wide interdisciplinary effort new gate drive circuitry, compact gate drive mechanics, new power circuitry and low cost, compact and modular inverter design with high dynamical capacity (up to 25kHz switching frequency) is realised. IGCT technology thus provides compact, robust, reliable, easy to use, service friendly, highly efficient and 100% explosion free inverters for a wide power range (0.5 MW to 10 MW, and by means of series connection of elements up to more than 100 MW).

   IGBT INSTABILITY DUE TO NEGATIVE GATE CAPACITANCE
By I. Omura; W. Fichtner [View]
[Download]

Abstract: For high collector voltages, IGBT operation is inherently unstable, leading to current redistribution between cells or even chips. The instability is due to a negative value of the MOS gate capacitance. The negative gate capacitance is caused by the positive charges due to the accumulated holes at the N-base surface. The positive charges induce the corresponding negative charges in the MOS gate electrode. This results in the negative gate capacitance.

   A NEW HIGH POWER DEVICE GCT (Gate Commutated Turn-off) THYRISTOR
By K. Satoh; M. Yamamoto; T. Nakagawa; A. Kawakami [View]
[Download]

Abstract: A New High Power Device, GCT(Qate Commutated Turn-off) thyristor has a quite different turn-off operation principle to the GTO. In the GCT thyristor, all main current during turn-off operation is commutated to the gate. This brings many advantage compared with the GTO. Its superior characteristics facilitate the change from the GTO to the GCT thyristor and enable the high power application area to be increased widely. This paper presents the special construction, features, and new technologies of this GCT thyristor and the new soft recovery Diodes which can be used with the GCT thyristor.

   ELECTRON BEAM VALVE - A NEW TYPE OF HIGH VOLTAGE SWITCHING VALVES FOR HIGH POWER SUPPLY SOURCES
By V.I. Perevodchikov; N. V. Matveev; V.N. Shapenko [View]
[Download]

Abstract: The new type of high voltage switching electron tubes has been designed. Electron-beam valve (EBV). EBV differs from traditional electron tubes with increased electron efficiency in switching mode, high value of switching current in continuous operation mode and pentode current-voltage characteristic. Combination of foregoing characteristics gives an opportunity to design high voltage supply units with stabilized modes of operation and fast protection. Examples of using EBV based supply units in different plants are presented.

   ELECTRON BEAM VALVE - A NEW TYPE OF HIGH VOLTAGE SWITCHING VALVES FOR IDGH POWER SUPPLY SOURCES
By V.l. Perevodchikov; N. V. Matveev; V.N. Shapenko [View]
[Download]

Abstract: The new type of high voltage switching electron tubes has been designed. Electron-beam valve (EBV). EBV differs from traditional electron tubes with increased electron efficiency in switching mode, high value of switching current in continuous operation mode and pentode current-voltage characteristic. Combination of foregoing characteristics gives an opportunity to design high voltage supply units with stabilized modes of operation and fast protection. Examples of using EBV based supply units in different plants are presented.

EPE 1997 – 26: Dialogue Session DS1b-1: SWITCHES - DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 26: Dialogue Session DS1b-1: SWITCHES - DEVICES
	[return to parent folder]

	The Dual-Gated Emitter Switched Thyristor By W.G. Min; S.C. Kim; J.M. Park; E.D. Kim; N.K. Kim	[View] [Download]
Abstract: New Dual-Gated EST(DGEST) is introduced which utilize separate gate control to improve the FBSOA and switching capability of conventional EST. The performance of the dual-gated EST have been simulated by commercial numerical device simulator to verify the characteristics with various structural parameters.

	Ultra high-ruggedness of 2.5 kV / 1kA Power Pack IGBT By Yasukazu Seki; Masayuki Soutome; Y. Oshikazu-Takahashi; Koh Yoshikawa; Takeshi Fujii; Humiaki Kirihata	[View] [Download]
Abstract: An electrical and reliable ruggedness of 2.5kV / 1kA high power flat-packaged IGBT (Power Pack IGBT) has been irivestigated. Recently, IGBT is widely used for the industrial and traction inverter applications because of its easy controllability and wide SOA. Considering about next generation inverter systems, achieving high efficiency and reducing the total inverter system size is very important items. To realize above important items, the IGBT have to be used more severe conditions, such as high frequency, high temperature, and any terrible circumstances. In order to match theses severe conditions, we have developed the Power Pack IGBT and investigate the electrical and reliable ruggedness.

	PERFORMANCE COMPARISON OF STANDARD AND 0PTIMISED CLAMP DIODES FOR HIGH POWER IGBT INVERTERS FOR TRACTION APPLICATIONS By F. Profumo; S. Facelli; A. Tenconi; B. Passerini; S. Fimiani; L. Fratelli	[View] [Download]
Abstract: In this paper the problem of overvoltages protection in high power IGBT inverters for traction applications is presented. The turn off operation of the voltage clamped IGBT inverters described. The capability of the clamp circuit in limiting the IGBT turn-off voltage spikes is analyzed and the importance of the clamp diode electrical characteristics are pointed out. Finally, experimental and simulated results allow a direct comparison between standard ultrafast clamp diodes and optimized clamp diodes.

	HIGH PERFORMANCE LOW COST MV A INVERTERS REALISED WITH INTEGRATED GATE COMMUTATED THYRISTORS (IGCT) By H. E. Gruening, B. Odegard	[View] [Download]
Abstract: Following in the steps of thyristor and GTO, GCT-technology merges their attractive features with the strengths of bipolar transistors and IGBTs to achieve very low on-state at high blocking voltage, small switching loss, snubberless turn-off, fast and precise timing and high turn-off current (>4kA) per chip. By a wide interdisciplinary effort new gate drive circuitry, compact gate drive mechanics, new power circuitry and low cost, compact and modular inverter design with high dynamical capacity (up to 25kHz switching frequency) is realised. IGCT technology thus provides compact, robust, reliable, easy to use, service friendly, highly efficient and 100% explosion free inverters for a wide power range (0.5 MW to 10 MW, and by means of series connection of elements up to more than 100 MW).

	IGBT INSTABILITY DUE TO NEGATIVE GATE CAPACITANCE By I. Omura; W. Fichtner	[View] [Download]
Abstract: For high collector voltages, IGBT operation is inherently unstable, leading to current redistribution between cells or even chips. The instability is due to a negative value of the MOS gate capacitance. The negative gate capacitance is caused by the positive charges due to the accumulated holes at the N-base surface. The positive charges induce the corresponding negative charges in the MOS gate electrode. This results in the negative gate capacitance.

	A NEW HIGH POWER DEVICE GCT (Gate Commutated Turn-off) THYRISTOR By K. Satoh; M. Yamamoto; T. Nakagawa; A. Kawakami	[View] [Download]
Abstract: A New High Power Device, GCT(Qate Commutated Turn-off) thyristor has a quite different turn-off operation principle to the GTO. In the GCT thyristor, all main current during turn-off operation is commutated to the gate. This brings many advantage compared with the GTO. Its superior characteristics facilitate the change from the GTO to the GCT thyristor and enable the high power application area to be increased widely. This paper presents the special construction, features, and new technologies of this GCT thyristor and the new soft recovery Diodes which can be used with the GCT thyristor.

	ELECTRON BEAM VALVE - A NEW TYPE OF HIGH VOLTAGE SWITCHING VALVES FOR HIGH POWER SUPPLY SOURCES By V.I. Perevodchikov; N. V. Matveev; V.N. Shapenko	[View] [Download]
Abstract: The new type of high voltage switching electron tubes has been designed. Electron-beam valve (EBV). EBV differs from traditional electron tubes with increased electron efficiency in switching mode, high value of switching current in continuous operation mode and pentode current-voltage characteristic. Combination of foregoing characteristics gives an opportunity to design high voltage supply units with stabilized modes of operation and fast protection. Examples of using EBV based supply units in different plants are presented.

	ELECTRON BEAM VALVE - A NEW TYPE OF HIGH VOLTAGE SWITCHING VALVES FOR IDGH POWER SUPPLY SOURCES By V.l. Perevodchikov; N. V. Matveev; V.N. Shapenko	[View] [Download]
Abstract: The new type of high voltage switching electron tubes has been designed. Electron-beam valve (EBV). EBV differs from traditional electron tubes with increased electron efficiency in switching mode, high value of switching current in continuous operation mode and pentode current-voltage characteristic. Combination of foregoing characteristics gives an opportunity to design high voltage supply units with stabilized modes of operation and fast protection. Examples of using EBV based supply units in different plants are presented.