| Abstract |
Following in the steps of thyristor and GTO, GCT-technology merges their attractive features with the strengths of bipolar transistors and IGBTs to achieve very low on-state at high blocking voltage, small switching loss, snubberless turn-off, fast and precise timing and high turn-off current (>4kA) per chip. By a wide interdisciplinary effort new gate drive circuitry, compact gate drive mechanics, new power circuitry and low cost, compact and modular inverter design with high dynamical capacity (up to 25kHz
switching frequency) is realised. IGCT technology thus provides compact, robust, reliable, easy to use, service friendly, highly efficient and 100% explosion free inverters for a wide power range (0.5 MW to 10 MW, and by means of series connection of elements up to more than 100 MW). |
