| Filename: | Unnamed file |
| Filesize: | 314 KB |
| IGBT INSTABILITY DUE TO NEGATIVE GATE CAPACITANCE | ||||||
| Author(s) | I. Omura; W. Fichtner | |||||
| Abstract | For high collector voltages, IGBT operation is inherently unstable, leading to current redistribution between cells or even chips. The instability is due to a negative value of the MOS gate capacitance. The negative gate capacitance is caused by the positive charges due to the accumulated holes at the N-base surface. The positive charges induce the corresponding negative charges in the MOS gate electrode. This results in the negative gate capacitance. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2016-01-05 by System | |||||
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