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The Dual-Gated Emitter Switched Thyristor
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| Author(s) |
W.G. Min; S.C. Kim; J.M. Park; E.D. Kim; N.K. Kim |
| Abstract |
New Dual-Gated EST(DGEST) is introduced which utilize separate gate control to improve the FBSOA and switching capability of conventional EST. The performance of the dual-gated EST have been simulated by commercial numerical device simulator to verify the characteristics with various structural parameters. |
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| Filename: | Unnamed file |
| Filesize: | 357.1 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-01-05 by System |
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