EPE Association: EPE 2014 - LS5b: Reliability

EPE 2014 - LS5b: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS5b: Reliability

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   Analysis of Short-Circuit Conditions for Silicon Carbide Power Transistors and Suggestions for Protection
By Diane-Perle SADIK, Juan COLMENARES, Georg TOLSTOY, Dimosthenis PEFTITSIS, Jacek RABKOWSKI, Hans-Peter NEE [View]
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Abstract: An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.

   Electric field reduction in the high voltage multiplier module in medical X-ray machines
By Jianing WANG, Sjoerd W.H. DE HAAN, Braham FERREIRA [View]
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Abstract: High voltage multiplier is widely used in the main power supply in medical X-ray machines. The output voltage can be above 100kV. Such a voltage leads to strong electric field in the multiplier. In this paper, the distribution of the electric field strength is analyzed based on the results obtained through 3D finite element (FE) field simulation. The distribution can be expressed as a function containing parasitic capacitances, which simply leads to a shielding technique for the field reduction. The shielding technique is applied in a 4-stage multiplier module and the resultant field reduction is proven by 3D FE simulation.

   Review of Active Thermal and Lifetime Control Techniques for Power Electronic Modules
By Markus ANDRESEN, Marco LISERRE, Giampaolo BUTICCHI [View]
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Abstract: Lifetime of power electronics modules can be extended with passive methods (condition monitoring) and active ones. This paper intends to give an overview in the second category, namely active thermal control or lifetime control, offering a critical comparison based on a comprehensive reference list. Mission profiles are compared to evaluate the potential of the controllers.

   Thermal Management Details and their Influence on the Aging of Power Semiconductors
By Martin SCHULZ [View]
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Abstract: The major factor defining the wear and tear in power electronic components is temperature swing. The paper presents an insight to failure mechanisms and the benefits that can be gained if a holistic approach considering devices, adequate design-in and advanced thermal management is considered.

EPE 2014 - LS5b: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - LS5b: Reliability
	[return to parent folder]

	Analysis of Short-Circuit Conditions for Silicon Carbide Power Transistors and Suggestions for Protection By Diane-Perle SADIK, Juan COLMENARES, Georg TOLSTOY, Dimosthenis PEFTITSIS, Jacek RABKOWSKI, Hans-Peter NEE	[View] [Download]
Abstract: An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully.

	Electric field reduction in the high voltage multiplier module in medical X-ray machines By Jianing WANG, Sjoerd W.H. DE HAAN, Braham FERREIRA	[View] [Download]
Abstract: High voltage multiplier is widely used in the main power supply in medical X-ray machines. The output voltage can be above 100kV. Such a voltage leads to strong electric field in the multiplier. In this paper, the distribution of the electric field strength is analyzed based on the results obtained through 3D finite element (FE) field simulation. The distribution can be expressed as a function containing parasitic capacitances, which simply leads to a shielding technique for the field reduction. The shielding technique is applied in a 4-stage multiplier module and the resultant field reduction is proven by 3D FE simulation.

	Review of Active Thermal and Lifetime Control Techniques for Power Electronic Modules By Markus ANDRESEN, Marco LISERRE, Giampaolo BUTICCHI	[View] [Download]
Abstract: Lifetime of power electronics modules can be extended with passive methods (condition monitoring) and active ones. This paper intends to give an overview in the second category, namely active thermal control or lifetime control, offering a critical comparison based on a comprehensive reference list. Mission profiles are compared to evaluate the potential of the controllers.

	Thermal Management Details and their Influence on the Aging of Power Semiconductors By Martin SCHULZ	[View] [Download]
Abstract: The major factor defining the wear and tear in power electronic components is temperature swing. The paper presents an insight to failure mechanisms and the benefits that can be gained if a holistic approach considering devices, adequate design-in and advanced thermal management is considered.