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Analysis of Short-Circuit Conditions for Silicon Carbide Power Transistors and Suggestions for Protection
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| Author(s) |
Diane-Perle SADIK, Juan COLMENARES, Georg TOLSTOY, Dimosthenis PEFTITSIS, Jacek RABKOWSKI, Hans-Peter NEE |
| Abstract |
An experimental analysis of the behavior under short-circuit conditions of three different Silicon Carbide (SiC) 1200 V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short-circuits. A suitable method for short-circuit detection without any comparator is demonstrated. A SiC JFET driver with an integrated short-circuit protection (SCP) is presented where a short-circuit detection is added to a conventional driver design in a simple way. Experimental tests of the SCP driver operating under short-circuit condition and under normal operation are performed successfully. |
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| Filename: | 0163-epe2014-full-22193202.pdf |
| Filesize: | 2.377 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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