EPE Association: EPE 2014 - DS2a: Active Components

EPE 2014 - DS2a: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - DS2a: Active Components

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   A generic Reverse Conducting IGBT structure for monolithic switching cells integration
By ADEM LALE, Abdelhakim BOURENNANE, Abdelilah EL KHADIRY, Frédéric RICHARDEAU [View]
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Abstract: A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesnt exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D SentaurusTM numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named Common Anode three-pole and Common Cathode three-pole, within the context of two-chip integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P+ wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P+ wall in order to ensure the thyristor triggering in the reverse conducting mode.

   A vertical bidirectional bipolar power switch (BipAC) for AC mains applications
By Hiba RIZK, Hakim TAHIR, Abdelhakim BOURENNANE, Jean-Pierre LAUR, Marie BREIL, Benjamin MORILLON, Samuel MENARD, Emmanuel COLLARD [View]
[Download]

Abstract: A vertical bipolar bidirectional switch (BipAC) is proposed for specific AC mains applications 230 V 50 Hz. The BipAC exhibits an ON-state voltage drop lower than 1 V and allows an ON-state andOFF-state control with respect to a single electrode which is at the reference potential. It can berealized either on an N substrate (type PNP) or on a P substrate (type NPN). Its low voltage drop andits ON/OFF control with respect to a single reference electrode make it interesting for applicationswith low load current ( 1 A rms). This study is based on 2D physical simulations carried-out usingSentaurusTM software.

   P-Doped Region Below The AlGaN/GaN Interface For Normally-Off HEMT
By Saleem HAMADY, Frédéric MORANCHO, Bilal BEYDOUN, Patrick AUSTIN, Mathieu GAVELLE [View]
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Abstract: Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed technique is capable of shifting the threshold voltage to positive values, making the HEMT normally-off. To address the advantages and drawbacks of the proposed structure a comparison with the normally-off Gate Injection Transistor (GIT) was performed. The proposed structure seems to be more effective when it comes to the p-doping concentration required to achieve normally-off operation and offers superior confinement for the two dimensional electron gas. On the other hand, the low forward gate voltage limits the increase of the threshold voltage.

   Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension
By HUA RONG, ZOHREH MOHAMMADI, YOGESH SHARMA, Michael JENNINGS, Philip MAWBY [View]
[Download]

Abstract: The 4H-SiC Schottky diode with 2-step mesa junction termination extension (JTE) structure has been investigated and optimized using SILVACO device simulator. Comparisons between different JTE structures of breakdown voltage and electric field crowding for Schottky diodes have been made. Simulation results show that the Space Modulated two-zone JTE has the highest breakdown voltage which is about 97\% of the ideal 1D parallel plane conditions. With the novel 2-step MESA Single Implant JTE, the breakdown voltage could achieve the same as the parallel plane breakdown votlage. The influences of the surface charge (Qs) and the oxide passivation on the breakdown characteristics of 4H-SiC Schottky diode with JTE are also investigated. A reduced sensitivity of breakdown voltage with respect to P-implant doping concentration is obtained for a novel 2-step mesa JTE with an additional P-type guard ring.

EPE 2014 - DS2a: Active Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - DS2a: Active Components
	[return to parent folder]

	A generic Reverse Conducting IGBT structure for monolithic switching cells integration By ADEM LALE, Abdelhakim BOURENNANE, Abdelilah EL KHADIRY, Frédéric RICHARDEAU	[View] [Download]
Abstract: A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesnt exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D SentaurusTM numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named Common Anode three-pole and Common Cathode three-pole, within the context of two-chip integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P+ wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P+ wall in order to ensure the thyristor triggering in the reverse conducting mode.

	A vertical bidirectional bipolar power switch (BipAC) for AC mains applications By Hiba RIZK, Hakim TAHIR, Abdelhakim BOURENNANE, Jean-Pierre LAUR, Marie BREIL, Benjamin MORILLON, Samuel MENARD, Emmanuel COLLARD	[View] [Download]
Abstract: A vertical bipolar bidirectional switch (BipAC) is proposed for specific AC mains applications 230 V 50 Hz. The BipAC exhibits an ON-state voltage drop lower than 1 V and allows an ON-state andOFF-state control with respect to a single electrode which is at the reference potential. It can berealized either on an N substrate (type PNP) or on a P substrate (type NPN). Its low voltage drop andits ON/OFF control with respect to a single reference electrode make it interesting for applicationswith low load current ( 1 A rms). This study is based on 2D physical simulations carried-out usingSentaurusTM software.

	P-Doped Region Below The AlGaN/GaN Interface For Normally-Off HEMT By Saleem HAMADY, Frédéric MORANCHO, Bilal BEYDOUN, Patrick AUSTIN, Mathieu GAVELLE	[View] [Download]
Abstract: Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed technique is capable of shifting the threshold voltage to positive values, making the HEMT normally-off. To address the advantages and drawbacks of the proposed structure a comparison with the normally-off Gate Injection Transistor (GIT) was performed. The proposed structure seems to be more effective when it comes to the p-doping concentration required to achieve normally-off operation and offers superior confinement for the two dimensional electron gas. On the other hand, the low forward gate voltage limits the increase of the threshold voltage.

	Study of breakdown characteristics of 4H-SiC Schottky diode with improved 2-step mesa junction termination extension By HUA RONG, ZOHREH MOHAMMADI, YOGESH SHARMA, Michael JENNINGS, Philip MAWBY	[View] [Download]
Abstract: The 4H-SiC Schottky diode with 2-step mesa junction termination extension (JTE) structure has been investigated and optimized using SILVACO device simulator. Comparisons between different JTE structures of breakdown voltage and electric field crowding for Schottky diodes have been made. Simulation results show that the Space Modulated two-zone JTE has the highest breakdown voltage which is about 97\% of the ideal 1D parallel plane conditions. With the novel 2-step MESA Single Implant JTE, the breakdown voltage could achieve the same as the parallel plane breakdown votlage. The influences of the surface charge (Qs) and the oxide passivation on the breakdown characteristics of 4H-SiC Schottky diode with JTE are also investigated. A reduced sensitivity of breakdown voltage with respect to P-implant doping concentration is obtained for a novel 2-step mesa JTE with an additional P-type guard ring.