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A generic Reverse Conducting IGBT structure for monolithic switching cells integration
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| Author(s) |
ADEM LALE, Abdelhakim BOURENNANE, Abdelilah EL KHADIRY, Frédéric RICHARDEAU |
| Abstract |
A generic structure of a Reverse Conducting IGBT (RC-IGBT) that integrates monolithically an IGBT for the forward conduction and a self-firing thyristor for the reverse conduction is proposed. As compared to the conventional RC-IGBT, the structure that we propose doesnt exhibit snap-back in the forward conducting mode [1], [2]. The static and dynamic performances of the structure are investigated in this paper by 2D SentaurusTM numerical simulations. The proposed structure is then used to design two complementary monolithic power chips, named Common Anode three-pole and Common Cathode three-pole, within the context of two-chip integration of static power converter [4]. These two chips are then associated to form a complete inverter. The proposed three-pole common cathode chip uses a P+ wall for insulation between the two adjacent RC-IGBT sections. The proposed elementary RC-IGBT uses also the P+ wall in order to ensure the thyristor triggering in the reverse conducting mode. |
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| Filename: | 0433-epe2014-full-22454658.pdf |
| Filesize: | 1.801 MB |
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| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
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