| |
P-Doped Region Below The AlGaN/GaN Interface For Normally-Off HEMT
| [View]
[Download]
|
| Author(s) |
Saleem HAMADY, Frédéric MORANCHO, Bilal BEYDOUN, Patrick AUSTIN, Mathieu GAVELLE |
| Abstract |
Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed technique is capable of shifting the threshold voltage to positive values, making the HEMT normally-off. To address the advantages and drawbacks of the proposed structure a comparison with the normally-off Gate Injection Transistor (GIT) was performed. The proposed structure seems to be more effective when it comes to the p-doping concentration required to achieve normally-off operation and offers superior confinement for the two dimensional electron gas. On the other hand, the low forward gate voltage limits the increase of the threshold voltage. |
| Download |
| Filename: | 0122-epe2014-full-00014070.pdf |
| Filesize: | 669.3 KB |
|
| Type |
Members Only |
| Date |
Last modified 2015-06-08 by System |
| |
 |