EPE Association: EPE 2007 - Subtopic 01-2

EPE 2007 - Subtopic 01-2 - LS: SiC devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-2 - LS: SiC devices

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   1.2 kV Rectifiers Thermal Behaviour: Comparison between Si PiN, 4H-SiC Schottky and 4H-SiC JBS diodes
By PEREZ-THOMAS Amador; GODIGNON Philippe; JORDA Xavier; MILLAN Jose; BROSSELARD Pierre; VELLVEHI Miquel [View]
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Abstract: A comparison between electrical characteristics of 1.2kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25C-300C range while the Si-PiN is tested up to 200C due to the Si temperature limitation. 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications.

   Comparison of Si- and SiC-Powerdiodes in 100A-Modules
By KOEHLER Hubertus; SOMMER Rainer; GEDIGA Swen; BARTSCH Wolfgang; ZAISER Georg [View]
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Abstract: This paper presents the comparison of transient behaviour of 6,5kV Si- and SiC-power diodes in 100A-modules. The switching behaviour at a current level of 100 A is shown at DC link voltages up to 3.5kV and at a junction temperature up to 125C using 25A-6.5kV-Si-IGBTs as switching devices. Different switching conditions in chopper circuits realize different rates of current decay up to 1000 A/s. Furthermore the switching behavior in a series connection of two SiC diodes is shown at DC link voltages up to 10.2kV in a 3-level npc inverter phase and at a junction temperature up to 90C. Experimental results are discussed in terms of reverse recovery currents and snappiness.

   SiC-Powerdiodes: Design and Performance
By BLOECHER Bernd; GEDIGA Swen; BARTSCH Wolfgang; THOMAS Bernd; MITLEHNER Heinz [View]
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Abstract: In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4 off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-Diodes with a 3 3m thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125C is shown. For these diodes first results on forward stability are also presented.

EPE 2007 - Subtopic 01-2 - LS: SiC devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-2 - LS: SiC devices
	[return to parent folder]

	1.2 kV Rectifiers Thermal Behaviour: Comparison between Si PiN, 4H-SiC Schottky and 4H-SiC JBS diodes By PEREZ-THOMAS Amador; GODIGNON Philippe; JORDA Xavier; MILLAN Jose; BROSSELARD Pierre; VELLVEHI Miquel	[View] [Download]
Abstract: A comparison between electrical characteristics of 1.2kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25C-300C range while the Si-PiN is tested up to 200C due to the Si temperature limitation. 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications.

	Comparison of Si- and SiC-Powerdiodes in 100A-Modules By KOEHLER Hubertus; SOMMER Rainer; GEDIGA Swen; BARTSCH Wolfgang; ZAISER Georg	[View] [Download]
Abstract: This paper presents the comparison of transient behaviour of 6,5kV Si- and SiC-power diodes in 100A-modules. The switching behaviour at a current level of 100 A is shown at DC link voltages up to 3.5kV and at a junction temperature up to 125C using 25A-6.5kV-Si-IGBTs as switching devices. Different switching conditions in chopper circuits realize different rates of current decay up to 1000 A/s. Furthermore the switching behavior in a series connection of two SiC diodes is shown at DC link voltages up to 10.2kV in a 3-level npc inverter phase and at a junction temperature up to 90C. Experimental results are discussed in terms of reverse recovery currents and snappiness.

	SiC-Powerdiodes: Design and Performance By BLOECHER Bernd; GEDIGA Swen; BARTSCH Wolfgang; THOMAS Bernd; MITLEHNER Heinz	[View] [Download]
Abstract: In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4 off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-Diodes with a 3 3m thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125C is shown. For these diodes first results on forward stability are also presented.