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SiC-Powerdiodes: Design and Performance
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| Author(s) |
BLOECHER Bernd; GEDIGA Swen; BARTSCH Wolfgang; THOMAS Bernd; MITLEHNER Heinz |
| Abstract |
In this work we discuss static measurements on bipolar 6.5 kV-SiC-diodes which were fabricated on 4H-SiC wafers preferentially cut 4 off the (0001) basal plane in order to prove design rules developed for Si-devices. To suppress emitter recombination currents, the p-emitter thickness has to be increased. The switching behaviour of optimized 6.5 kV-Diodes with a 3 3m thick p-emitter at different current levels at DC link voltages of 4 kV and at junction temperatures up to 125C is shown. For these diodes first results on forward stability are also presented. |
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| Filename: | 0636-epe2007-full-15335171.pdf |
| Filesize: | 697.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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