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1.2 kV Rectifiers Thermal Behaviour: Comparison between Si PiN, 4H-SiC Schottky and 4H-SiC JBS diodes
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| Author(s) |
PEREZ-THOMAS Amador; GODIGNON Philippe; JORDA Xavier; MILLAN Jose; BROSSELARD Pierre; VELLVEHI Miquel |
| Abstract |
A comparison between electrical characteristics of 1.2kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25C-300C range while the Si-PiN is tested up to 200C due to the Si temperature limitation. 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications. |
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| Filename: | 0426-epe2007-full-13540800.pdf |
| Filesize: | 370.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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