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Comparison of Si- and SiC-Powerdiodes in 100A-Modules
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| Author(s) |
KOEHLER Hubertus; SOMMER Rainer; GEDIGA Swen; BARTSCH Wolfgang; ZAISER Georg |
| Abstract |
This paper presents the comparison of transient behaviour of 6,5kV Si- and SiC-power diodes in 100A-modules. The switching behaviour at a current level of 100 A is shown at DC link voltages up to 3.5kV and at a junction temperature up to 125C using 25A-6.5kV-Si-IGBTs as switching devices. Different switching conditions in chopper circuits realize different rates of current decay up to 1000 A/s. Furthermore the switching behavior in a series connection of two SiC diodes is shown at DC link voltages up to 10.2kV in a 3-level npc inverter phase and at a junction temperature up to 90C. Experimental results are discussed in terms of reverse recovery currents and snappiness. |
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| Filename: | 0552-epe2007-full-13512103.pdf |
| Filesize: | 500.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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