EPE Association: EPE-PEMC 2006 - Topic 01: SEMICONDUCTOR DEVICES AND PACKAGING

EPE-PEMC 2006 - Topic 01: SEMICONDUCTOR DEVICES AND PACKAGING
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2006 - Conference > EPE-PEMC 2006 - Topic 01: SEMICONDUCTOR DEVICES AND PACKAGING

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   A New Fast and Rugged 100 V Power MOSFET
By Ralf Siemieniec, Franz Hirler, Andreas Schloegl, Maximilian Roesch, Negar Soufi-Amlashi, Jan Ropohl, Uli Hiller [View]
[Download]

Abstract: A new, rugged 100 V power MOSFET of the OptiMOS-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance RON with outstanding switching properties. The technology also offers a small gate charge QG and a small gate resistance RG. In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge QRR. Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control.

   Limit Operation Regimes of Selected Power Semiconductor Elements
By Ivo Dolezel, Pavel Dvorsak, Karel Kalcik, Viktor Valouch [View]
[Download]

Abstract: Operation regimes of modern power semiconductor devices (such as IGCT thyristors or IGBT transistors) are characterized by switching high currents of the order of kA at the voltage level of several kV. Although their internal and eventual contact resistances are very low, the Joule losses in them reach quite high values and corresponding heat may lead to unacceptable (local or global) temperature rise. The paper represents an introductory study in the area and deals with partial mathematical and computer modeling of the temperature rise of an axisymmetric device during its operation in several regimes differing by nominal current and frequency of switching. Modeled is, however, only the nonstationary temperature field, while the distribution of the specific Joule losses was found experimentally. The convective heat transfer coefficient necessary for formulation of the boundary condition of the third kind is calculated approximately from velocity of the cooling air. The methodology is illustrated on an example of a real IGCT device. Selected results are compared with measurements.

   Method for the Analysis of Power MOSFET Losses in a Synchronous Buck Converter
By Toni Lopez, Reinhold Elferich [View]
[Download]

Abstract: This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load (PoL) applications underlies the study of MOSFETs’ switching behaviour. The methodology aims at the derivation of roadmap targets for future technology developments.

   On the Breakdown Voltage of Commercial High Voltage Silicon Rectifier Diodes
By Vasile Obreja [View]
[Download]

Abstract: Investigation has been performed on the reverse current-voltage characteristics of commercial silicon rectifier diodes. Typical I-V reverse characteristics are shown for standard recovery and fast recovery high voltage silicon diodes at room and high junction temperature. Linear voltage dependence of the leakage reverse current is exhibited starting from a voltage value in a range of 50 – 300V. Both for standard and fast recovery diodes, deviation from the linear variation has been found at some higher applied voltage. Different voltage dependence of the reverse current is further manifested up to a voltage value where practically, abrupt increase of the current takes place (the breakdown region). For such devices operation without risk of failure even for short time in the breakdown region is not possible. For special devices like controlled-avalanche diodes, practically, no transition region is observed between the linear variation portion and the abrupt increase of the reverse current. Reliable operation in the breakdown region is possible for such devices but in specified conditions. In such a case, better control is achieved on the reverse current, so that, at the breakdown voltage, most of the avalanche current flows in the junction bulk and not at the junction edge.

   Optimized Design of Power Semiconductor Devices for DC-AC Royer Converter Topology in Case of CCFL Lighting Applications
By Filippo Chimento, Salvatore Musumeci, Angelo Raciti, Salvatore Tomarchio, Rosario Scollo [View]
[Download]

Abstract: The Cold Cathode Fluorescent Lamps are particularly used in back lighting of LCD monitors. The supplying circuits must have the characteristic of good thermal management in order to avoid temperature rise over 60°C, which can cause large dark spots in the screen. In this paper an innovative solution is proposed that consists on a Royer configuration of a current-fed push-pull inverter supplied by a buck DC-DC converter. The main characteristics of this configuration are Zero Voltage Switching operations, which minimize both the power consumption and the thermal dissipation, and the good suitability for system integration, which allows to consider package-targeted economic solutions.

   Simple Hybrid Electrothermal Simulation Procedure
By Viktor Sunde, Zeljko Jakopovic, Neven Cobanov [View]
[Download]

Abstract: Electrothermal models of power semiconductor components are often too complex and requiring a long simulation time. Besides, there can be a situation that electrical and thermal behaviour of the circuit are not analyzed within the same department of a company. This necessitates an appropriate procedure of electrothermal simulation, sufficiently quick, accurate and simple, allowing an efficient exchange of data of electrical and thermal parts of the system. Presented in this article is a simple calculation procedure for the time course of silicon equivalent temperature in power semiconductor components, based on the previously calculated current loading. This hybrid procedure allows the exchange and use of simulation results in case of separated procedures of current and thermal dimensioning of power semiconductor components.

EPE-PEMC 2006 - Topic 01: SEMICONDUCTOR DEVICES AND PACKAGING
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2006 - Conference > EPE-PEMC 2006 - Topic 01: SEMICONDUCTOR DEVICES AND PACKAGING
	[return to parent folder]

	A New Fast and Rugged 100 V Power MOSFET By Ralf Siemieniec, Franz Hirler, Andreas Schloegl, Maximilian Roesch, Negar Soufi-Amlashi, Jan Ropohl, Uli Hiller	[View] [Download]
Abstract: A new, rugged 100 V power MOSFET of the OptiMOS-family is described. By applying compensation principles, a device technology was developed that combines low on-state resistance RON with outstanding switching properties. The technology also offers a small gate charge QG and a small gate resistance RG. In addition, the internal body diode, when acting as freewheeling diode, reveals a soft reverse-recovery with a small reverse-recovery charge QRR. Therefore, the technology is particularly suitable for a variety of applications, including highly efficient DC-DC and AC-DC converters, telecommunication and server topologies, Class-D amplifiers, and motor control.

	Limit Operation Regimes of Selected Power Semiconductor Elements By Ivo Dolezel, Pavel Dvorsak, Karel Kalcik, Viktor Valouch	[View] [Download]
Abstract: Operation regimes of modern power semiconductor devices (such as IGCT thyristors or IGBT transistors) are characterized by switching high currents of the order of kA at the voltage level of several kV. Although their internal and eventual contact resistances are very low, the Joule losses in them reach quite high values and corresponding heat may lead to unacceptable (local or global) temperature rise. The paper represents an introductory study in the area and deals with partial mathematical and computer modeling of the temperature rise of an axisymmetric device during its operation in several regimes differing by nominal current and frequency of switching. Modeled is, however, only the nonstationary temperature field, while the distribution of the specific Joule losses was found experimentally. The convective heat transfer coefficient necessary for formulation of the boundary condition of the third kind is calculated approximately from velocity of the cooling air. The methodology is illustrated on an example of a real IGCT device. Selected results are compared with measurements.

	Method for the Analysis of Power MOSFET Losses in a Synchronous Buck Converter By Toni Lopez, Reinhold Elferich	[View] [Download]
Abstract: This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load (PoL) applications underlies the study of MOSFETs’ switching behaviour. The methodology aims at the derivation of roadmap targets for future technology developments.

	On the Breakdown Voltage of Commercial High Voltage Silicon Rectifier Diodes By Vasile Obreja	[View] [Download]
Abstract: Investigation has been performed on the reverse current-voltage characteristics of commercial silicon rectifier diodes. Typical I-V reverse characteristics are shown for standard recovery and fast recovery high voltage silicon diodes at room and high junction temperature. Linear voltage dependence of the leakage reverse current is exhibited starting from a voltage value in a range of 50 – 300V. Both for standard and fast recovery diodes, deviation from the linear variation has been found at some higher applied voltage. Different voltage dependence of the reverse current is further manifested up to a voltage value where practically, abrupt increase of the current takes place (the breakdown region). For such devices operation without risk of failure even for short time in the breakdown region is not possible. For special devices like controlled-avalanche diodes, practically, no transition region is observed between the linear variation portion and the abrupt increase of the reverse current. Reliable operation in the breakdown region is possible for such devices but in specified conditions. In such a case, better control is achieved on the reverse current, so that, at the breakdown voltage, most of the avalanche current flows in the junction bulk and not at the junction edge.

	Optimized Design of Power Semiconductor Devices for DC-AC Royer Converter Topology in Case of CCFL Lighting Applications By Filippo Chimento, Salvatore Musumeci, Angelo Raciti, Salvatore Tomarchio, Rosario Scollo	[View] [Download]
Abstract: The Cold Cathode Fluorescent Lamps are particularly used in back lighting of LCD monitors. The supplying circuits must have the characteristic of good thermal management in order to avoid temperature rise over 60°C, which can cause large dark spots in the screen. In this paper an innovative solution is proposed that consists on a Royer configuration of a current-fed push-pull inverter supplied by a buck DC-DC converter. The main characteristics of this configuration are Zero Voltage Switching operations, which minimize both the power consumption and the thermal dissipation, and the good suitability for system integration, which allows to consider package-targeted economic solutions.

	Simple Hybrid Electrothermal Simulation Procedure By Viktor Sunde, Zeljko Jakopovic, Neven Cobanov	[View] [Download]
Abstract: Electrothermal models of power semiconductor components are often too complex and requiring a long simulation time. Besides, there can be a situation that electrical and thermal behaviour of the circuit are not analyzed within the same department of a company. This necessitates an appropriate procedure of electrothermal simulation, sufficiently quick, accurate and simple, allowing an efficient exchange of data of electrical and thermal parts of the system. Presented in this article is a simple calculation procedure for the time course of silicon equivalent temperature in power semiconductor components, based on the previously calculated current loading. This hybrid procedure allows the exchange and use of simulation results in case of separated procedures of current and thermal dimensioning of power semiconductor components.