| Abstract |
Investigation has been performed on the reverse
current-voltage characteristics of commercial silicon
rectifier diodes. Typical I-V reverse characteristics are
shown for standard recovery and fast recovery high voltage
silicon diodes at room and high junction temperature.
Linear voltage dependence of the leakage reverse current is
exhibited starting from a voltage value in a range of 50 –
300V. Both for standard and fast recovery diodes, deviation
from the linear variation has been found at some higher
applied voltage. Different voltage dependence of the reverse
current is further manifested up to a voltage value where
practically, abrupt increase of the current takes place (the
breakdown region). For such devices operation without risk
of failure even for short time in the breakdown region is not
possible. For special devices like controlled-avalanche
diodes, practically, no transition region is observed between
the linear variation portion and the abrupt increase of the
reverse current. Reliable operation in the breakdown region
is possible for such devices but in specified conditions. In
such a case, better control is achieved on the reverse
current, so that, at the breakdown voltage, most of the
avalanche current flows in the junction bulk and not at the
junction edge. |
