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A New Fast and Rugged 100 V Power MOSFET
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| Author(s) |
Ralf Siemieniec, Franz Hirler, Andreas Schloegl, Maximilian Roesch, Negar Soufi-Amlashi, Jan Ropohl, Uli Hiller |
| Abstract |
A new, rugged 100 V power MOSFET of the
OptiMOS-family is described. By applying compensation
principles, a device technology was developed that combines
low on-state resistance RON with outstanding switching
properties. The technology also offers a small gate charge
QG and a small gate resistance RG. In addition, the internal
body diode, when acting as freewheeling diode, reveals a
soft reverse-recovery with a small reverse-recovery charge
QRR. Therefore, the technology is particularly suitable for a
variety of applications, including highly efficient DC-DC and
AC-DC converters, telecommunication and server topologies,
Class-D amplifiers, and motor control. |
| Download |
| Filename: | T1-102.pdf |
| Filesize: | 452.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2007-03-08 by System |
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