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Limit Operation Regimes of Selected Power Semiconductor Elements
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| Author(s) |
Ivo Dolezel, Pavel Dvorsak, Karel Kalcik, Viktor Valouch |
| Abstract |
Operation regimes of modern power semiconductor
devices (such as IGCT thyristors or IGBT transistors)
are characterized by switching high currents of the order of
kA at the voltage level of several kV. Although their internal
and eventual contact resistances are very low, the Joule
losses in them reach quite high values and corresponding
heat may lead to unacceptable (local or global) temperature
rise. The paper represents an introductory study in the area
and deals with partial mathematical and computer modeling
of the temperature rise of an axisymmetric device during its
operation in several regimes differing by nominal current
and frequency of switching. Modeled is, however, only the
nonstationary temperature field, while the distribution of
the specific Joule losses was found experimentally. The convective
heat transfer coefficient necessary for formulation of
the boundary condition of the third kind is calculated approximately
from velocity of the cooling air. The methodology
is illustrated on an example of a real IGCT device. Selected
results are compared with measurements. |
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| Filename: | T1-501.pdf |
| Filesize: | 174.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2007-03-08 by System |
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