EPE Association: EPE 2005 - Topic 01-5c - DS: Applications of power devices, Simulation and modelling of power devices

EPE 2005 - Topic 01-5c - DS: Applications of power devices, Simulation and modelling of power devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-5c - DS: Applications of power devices, Simulation and modelling of power devices

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   50 kJ Ultra Compact Pulsed Power Supply Unit For Various Applications
By STERZELMEIER Klaus [View]
[Download]

Abstract: During the last years modular structured energy packs have been built up at ISL as a basic installation for various applications in the field of pulsed power electronics. Each power supply module comprises one energy storage capacitor, a thyristor stack, a corresponding number of crowbar diodes and a well-designed coaxial power line serving as a pulse forming network and current limiting reactor. The paper presented here describes the basic design of the 50 kJ energy pack, a further developed set-up with a reduced overall height obtained by using a novel multichip thyristor and the broad field of applications for such high-power supply units.

   A new Trench IGBT distributed model with thermo-sensible parameters.
By ELGHAZOUANI Mohamed; MUSSARD Lionel; DE MAGLIE Rodolphe; SANCHEZ Jea; SCHANEN Jea; RICHARDEAU Frederic; AUSTIN Patrick [View]
[Download]

Abstract: In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench InsulatedGate Bipolar Transistor (TIGBT) is presented. This model is implemented in the Saber simulator inMAST language. Simulation and experimental results are compared for different temperatures in orderto validate the model in adiabatic conditions.

   Accurate Behavioural Modelling Of Power MOSFETs Based On Device Measurements And FE-Simulations
By LOPEZ Toni; ELFERICH Reinhold; KOPER Nick [View]
[Download]

Abstract: Optimization of low voltage power MOSFETs in hard-switching high frequency power converters needs accurate models. This paper deals with a behavioural modelling approach, which employs look-up tables and fitting functions describing the device’s characteristics. The required model data can be derived from extensive measurements or alternatively, from finite element (FE) device simulations. Both ways are outlined and compared. A simulation example of a step-down converter shows a typical switching transient and demonstrates the effects covered by the model.

   An optimized Snubber Design for Three Level Inverter Systems
By HEROLD Gerhard; AL NASSEIR Jamal; WEINDL Christian [View]
[Download]

Abstract: Abstract - In this paper a new circuit design for the protection of e.g. multi level converters is presented. The so-called ‘optimized snubber design’ still comprises most of the positive features as a low number of components, improved efficiency due to the low snubber element and power semiconductor losses, reduced over-voltage across the semiconductor devices and no balancing problems. With theseadvantages, the new proposed snubber circuits can be used for high power inverters as well as the socalled Flexible AC Transmission Systems (FACTS). The presented snubber circuit has been analyzed and confronted with different existing converter designs using a simulation environment. The simulationresults are compared with the output of a standardized three level converter system to verify the advantages of the new snubber design.

   Analysis of the Possibility to use 1200V IGBT Devices in Snubberless Medium Power Motor Converters Supplied from the 600V Mains
By FIELD Perry; GRBOVIC Petar [View]
[Download]

Abstract: The ability to use 1200V IGBTs in a 600Vac motor drive has the potential to reduce product size/cost. The challenge is to adequately control the switching of the IGBT avoiding over-voltage. The application of 1200V IGBTs is assessed and a solution to the over-voltage problems given using active gate drivers.

   Driving Optimization of IGBT Devices for Traction Applications
By GIANNINI Giuseppe; TESTA Antonio; FRASCADORE Gaetano; CACCIATO Mario; NISCI Roberto; CONSOLI Alfio [View]
[Download]

Abstract: A new optimization strategy for driver circuits in high power – high voltage IGBTs is proposed. Main features of such an approach are the reduction of the switching losses and active control of the device overvoltage. To confirm the proposed approach, an auxiliary circuit has been realized and used to equip an industrial driver, then experimental tests have been carried out.

   EN55015 COMPLIANT 500W DIMMER WITH LOW-LOSSES SYMMETRICAL SWITCHES
By ACHART Raynald; GONTHIER Laurent; MORILLON Benjamin [View]
[Download]

Abstract: An AC light dimmer topology using two voltage-controlled symmetrical switches is presented. After an introduction of the silicon structure of these new engineering devices, their conduction losses are compared to today technologies. Gate driver circuits are presented to fulfill EN55015 standard with low commutation losses. The impact of the recovery current is also discussed.

   Frequency and Time Domain Homogenization of Windings in 2D FE Models
By GYSELINCK Johan; ROBERT FreDeRic [View]
[Download]

Abstract: This paper deals with novel homogenization methods for theinclusion of skin and proximity effect in windings infinite-element (FE) models of electromagnetic devices. A generalfrequency-domain approach and its original extension to the timedomain are proposed. In a preprocessing step the conductors (i.e.type of cross-section and packing, and fill factor) arecharacterized in the frequency domain by means of a reduced FEmodel, producing six dimensionless and frequency-dependent skin-and proximity-effect coefficients. The latter coefficients arereadily taken into account in a frequency-domain FE analysis of acomplete device. A time-domain FE analysis with homogenizedwinding requires the introduction of additional unknowns andequations; this extension to the time domain is analogous to theapproximation of a frequency-dependent inductive impedance by aladder circuit consisting of constant resistances and inductances.By way of illustration and validation, the homogenization methodsare applied to a 2D FE model of an inductor. For the winding,different types of wire cross-section and packing, vizround/hexagonal and rectangular/rectangular, are considered. Aprecise reference solution is obtained with a FE model in whichall wires are finely discretized. An excellent agreement isachieved while reducing the computation time considerably.

   High Frequency 3 MHz Offline SMPS for Audio Applications
By JANSSEN Eric; SAUERLAENDER Georg [View]
[Download]

Abstract: Silicon-On-Insulator (SOI) is a unique technology for high voltage power MOSFET devices that allows reducing switching losses significantly. Together with new emerging high frequency power ferrite grades the operation of offline switch mode power supplies around 3MHz has become a promising option to replace the bulky line transformers of compact audio sets.

   Managing power semiconductor obsolesence by press-pack IGBT substitution
By WAKEMAN Frank; LI Gangru; GOLLAND Ashley [View]
[Download]

Abstract: Press-pack IGBTs are identified as a possible replacement for obsolete power semiconductor technology. Traction power electronic systems using thyristor technology are compared to those substituted with press-pack IGBTs, with and without additional modifications to optimise performance. Example applications are used to demonstrate the viability of substituting press-pack IGBT technology into existing and fully refurbished thyristor based systems, as a solution for obsolescence. The characteristics of available and future press-pack IGBTs are described.

   Optimisation of Primary Transistors in Flyback Converters with High Input Voltage
By ECKLEBE Andreas; LINDEMANN Andreas [View]
[Download]

Abstract: In spite of various efforts to replace high voltage MOSFETs by devices with lower conduction losses, the formers can still be found in many power supplies. An analysis of basic device properties with respect to use in flyback converters is given. The result is surprising with respect to the influence of different conduction characteristics and parasitics; it permits to focus on particularly relevant transistor parameters.

   Series Connection of High Power IGBT modules for traction applications
By ABBATE Carmine; CASCONE Beniamino; IANNUZZO Francesco; BUSATTO Giovanni; GIANNINI Giuseppe; FRATELLI Luigi [View]
[Download]

Abstract: IGBT series-connected power switching circuit is presented. Voltage balance on IGBT’s is ensured by means of a simple auxiliary circuit applied directly on the high power inverter used in hard switching applications. Analysis in terms of dissipated energy, collector overvoltage and switching frequencies, comparing performances of a single high voltage IGBT (3300V) module and two series connected 1700V IGBTs is reported. An extended experimental analysis is also reported. Both analysis confirm the advantages in using two series connected IGBT in substitution of a single high voltage module in terms of power losses and switching performances.

   Series connection of Insulated Gate Bipolar Transistors (IGBTs)
By SHAMMAS Noel; TENNAKOON Sarath; WITHANAGE Ruchira [View]
[Download]

Abstract: In power electronics applications, high voltage switches are realised by connecting existing devices in series. The main problem of unequal sharing of voltage across the series connected devices can be minimised by using active gate control techniques, snubber circuits and clamping circuits. The aim of this paper is to investigate the available voltage balancing techniques in series connection of Insulated Gate Bipolar Transistors (IGBTs) and to describe a hybrid voltage balancing method which is used to equalise the voltage sharing in series connected IGBTs during both switching transients and steady state. This technique consists of both active gate control circuit and small passive snubber. The active gate control circuit is very simple and passive snubber is optimised to have low power losses. Passive snubber was optimised for different operating voltages and currents. The proposed technique was simulated for two 1kV/50A IGBTs in series and the results show good voltage balancing.

   SIMULATION OF SWITCHED-MODE POWER SUPPLIES (SMPS) THROUGH AN ACCURATE NON-QUASI-STATIC SPICE POWER DIODE MODEL
By GHIONE Giovanni; CAPPELLUTI Federica; MALAGONI BUIATTI Gustavo [View]
[Download]

Abstract: A SPICE model of power PiN diodes is presented, based on the solution of the Ambipolar DiffusionEquation through the Finite Difference Method. The model is validated against experimentalcharacterizations of commercial devices for on-state and reverse-recovery operation. Simulation examplesof practical Switched-Mode Power Supplies (SMPS) are provided, in order to demonstrate the modeleffectiveness, speed and convergence properties.

   Universal Power Losses Estimator for Low Voltage IGCTs Switching Cells
By ALVAREZ Silverio; LADOUX Philippe [View]
[Download]

Abstract: The paper presents an accurate “universal” power losses estimator for Low Voltage IGCTs (3.3kV) switching cells useful to evaluate their operation within different topologies. The proposed estimator is based on the ideal switches simulation approach, and it considers relevant factors than influence the losses of high power converters such as output current ripple, DC link voltage fluctuations, over-modulation and closed loop operation. Also, the principle of this estimator can be applied to other semiconductors such as IGBTs. This tool can help to compare the suitability of different power converter topologies and/or semiconductor technologies for their use into a specific application, leading to the final selection of the system. Here, as an application example of the universal power losses estimator, a LV IGCTs based reactive power compensator for single-phase system is presented.

EPE 2005 - Topic 01-5c - DS: Applications of power devices, Simulation and modelling of power devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-5c - DS: Applications of power devices, Simulation and modelling of power devices
	[return to parent folder]

	50 kJ Ultra Compact Pulsed Power Supply Unit For Various Applications By STERZELMEIER Klaus	[View] [Download]
Abstract: During the last years modular structured energy packs have been built up at ISL as a basic installation for various applications in the field of pulsed power electronics. Each power supply module comprises one energy storage capacitor, a thyristor stack, a corresponding number of crowbar diodes and a well-designed coaxial power line serving as a pulse forming network and current limiting reactor. The paper presented here describes the basic design of the 50 kJ energy pack, a further developed set-up with a reduced overall height obtained by using a novel multichip thyristor and the broad field of applications for such high-power supply units.

	A new Trench IGBT distributed model with thermo-sensible parameters. By ELGHAZOUANI Mohamed; MUSSARD Lionel; DE MAGLIE Rodolphe; SANCHEZ Jea; SCHANEN Jea; RICHARDEAU Frederic; AUSTIN Patrick	[View] [Download]
Abstract: In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench InsulatedGate Bipolar Transistor (TIGBT) is presented. This model is implemented in the Saber simulator inMAST language. Simulation and experimental results are compared for different temperatures in orderto validate the model in adiabatic conditions.

	Accurate Behavioural Modelling Of Power MOSFETs Based On Device Measurements And FE-Simulations By LOPEZ Toni; ELFERICH Reinhold; KOPER Nick	[View] [Download]
Abstract: Optimization of low voltage power MOSFETs in hard-switching high frequency power converters needs accurate models. This paper deals with a behavioural modelling approach, which employs look-up tables and fitting functions describing the device’s characteristics. The required model data can be derived from extensive measurements or alternatively, from finite element (FE) device simulations. Both ways are outlined and compared. A simulation example of a step-down converter shows a typical switching transient and demonstrates the effects covered by the model.

	An optimized Snubber Design for Three Level Inverter Systems By HEROLD Gerhard; AL NASSEIR Jamal; WEINDL Christian	[View] [Download]
Abstract: Abstract - In this paper a new circuit design for the protection of e.g. multi level converters is presented. The so-called ‘optimized snubber design’ still comprises most of the positive features as a low number of components, improved efficiency due to the low snubber element and power semiconductor losses, reduced over-voltage across the semiconductor devices and no balancing problems. With theseadvantages, the new proposed snubber circuits can be used for high power inverters as well as the socalled Flexible AC Transmission Systems (FACTS). The presented snubber circuit has been analyzed and confronted with different existing converter designs using a simulation environment. The simulationresults are compared with the output of a standardized three level converter system to verify the advantages of the new snubber design.

	Analysis of the Possibility to use 1200V IGBT Devices in Snubberless Medium Power Motor Converters Supplied from the 600V Mains By FIELD Perry; GRBOVIC Petar	[View] [Download]
Abstract: The ability to use 1200V IGBTs in a 600Vac motor drive has the potential to reduce product size/cost. The challenge is to adequately control the switching of the IGBT avoiding over-voltage. The application of 1200V IGBTs is assessed and a solution to the over-voltage problems given using active gate drivers.

	Driving Optimization of IGBT Devices for Traction Applications By GIANNINI Giuseppe; TESTA Antonio; FRASCADORE Gaetano; CACCIATO Mario; NISCI Roberto; CONSOLI Alfio	[View] [Download]
Abstract: A new optimization strategy for driver circuits in high power – high voltage IGBTs is proposed. Main features of such an approach are the reduction of the switching losses and active control of the device overvoltage. To confirm the proposed approach, an auxiliary circuit has been realized and used to equip an industrial driver, then experimental tests have been carried out.

	EN55015 COMPLIANT 500W DIMMER WITH LOW-LOSSES SYMMETRICAL SWITCHES By ACHART Raynald; GONTHIER Laurent; MORILLON Benjamin	[View] [Download]
Abstract: An AC light dimmer topology using two voltage-controlled symmetrical switches is presented. After an introduction of the silicon structure of these new engineering devices, their conduction losses are compared to today technologies. Gate driver circuits are presented to fulfill EN55015 standard with low commutation losses. The impact of the recovery current is also discussed.

	Frequency and Time Domain Homogenization of Windings in 2D FE Models By GYSELINCK Johan; ROBERT FreDeRic	[View] [Download]
Abstract: This paper deals with novel homogenization methods for theinclusion of skin and proximity effect in windings infinite-element (FE) models of electromagnetic devices. A generalfrequency-domain approach and its original extension to the timedomain are proposed. In a preprocessing step the conductors (i.e.type of cross-section and packing, and fill factor) arecharacterized in the frequency domain by means of a reduced FEmodel, producing six dimensionless and frequency-dependent skin-and proximity-effect coefficients. The latter coefficients arereadily taken into account in a frequency-domain FE analysis of acomplete device. A time-domain FE analysis with homogenizedwinding requires the introduction of additional unknowns andequations; this extension to the time domain is analogous to theapproximation of a frequency-dependent inductive impedance by aladder circuit consisting of constant resistances and inductances.By way of illustration and validation, the homogenization methodsare applied to a 2D FE model of an inductor. For the winding,different types of wire cross-section and packing, vizround/hexagonal and rectangular/rectangular, are considered. Aprecise reference solution is obtained with a FE model in whichall wires are finely discretized. An excellent agreement isachieved while reducing the computation time considerably.

	High Frequency 3 MHz Offline SMPS for Audio Applications By JANSSEN Eric; SAUERLAENDER Georg	[View] [Download]
Abstract: Silicon-On-Insulator (SOI) is a unique technology for high voltage power MOSFET devices that allows reducing switching losses significantly. Together with new emerging high frequency power ferrite grades the operation of offline switch mode power supplies around 3MHz has become a promising option to replace the bulky line transformers of compact audio sets.

	Managing power semiconductor obsolesence by press-pack IGBT substitution By WAKEMAN Frank; LI Gangru; GOLLAND Ashley	[View] [Download]
Abstract: Press-pack IGBTs are identified as a possible replacement for obsolete power semiconductor technology. Traction power electronic systems using thyristor technology are compared to those substituted with press-pack IGBTs, with and without additional modifications to optimise performance. Example applications are used to demonstrate the viability of substituting press-pack IGBT technology into existing and fully refurbished thyristor based systems, as a solution for obsolescence. The characteristics of available and future press-pack IGBTs are described.

	Optimisation of Primary Transistors in Flyback Converters with High Input Voltage By ECKLEBE Andreas; LINDEMANN Andreas	[View] [Download]
Abstract: In spite of various efforts to replace high voltage MOSFETs by devices with lower conduction losses, the formers can still be found in many power supplies. An analysis of basic device properties with respect to use in flyback converters is given. The result is surprising with respect to the influence of different conduction characteristics and parasitics; it permits to focus on particularly relevant transistor parameters.

	Series Connection of High Power IGBT modules for traction applications By ABBATE Carmine; CASCONE Beniamino; IANNUZZO Francesco; BUSATTO Giovanni; GIANNINI Giuseppe; FRATELLI Luigi	[View] [Download]
Abstract: IGBT series-connected power switching circuit is presented. Voltage balance on IGBT’s is ensured by means of a simple auxiliary circuit applied directly on the high power inverter used in hard switching applications. Analysis in terms of dissipated energy, collector overvoltage and switching frequencies, comparing performances of a single high voltage IGBT (3300V) module and two series connected 1700V IGBTs is reported. An extended experimental analysis is also reported. Both analysis confirm the advantages in using two series connected IGBT in substitution of a single high voltage module in terms of power losses and switching performances.

	Series connection of Insulated Gate Bipolar Transistors (IGBTs) By SHAMMAS Noel; TENNAKOON Sarath; WITHANAGE Ruchira	[View] [Download]
Abstract: In power electronics applications, high voltage switches are realised by connecting existing devices in series. The main problem of unequal sharing of voltage across the series connected devices can be minimised by using active gate control techniques, snubber circuits and clamping circuits. The aim of this paper is to investigate the available voltage balancing techniques in series connection of Insulated Gate Bipolar Transistors (IGBTs) and to describe a hybrid voltage balancing method which is used to equalise the voltage sharing in series connected IGBTs during both switching transients and steady state. This technique consists of both active gate control circuit and small passive snubber. The active gate control circuit is very simple and passive snubber is optimised to have low power losses. Passive snubber was optimised for different operating voltages and currents. The proposed technique was simulated for two 1kV/50A IGBTs in series and the results show good voltage balancing.

	SIMULATION OF SWITCHED-MODE POWER SUPPLIES (SMPS) THROUGH AN ACCURATE NON-QUASI-STATIC SPICE POWER DIODE MODEL By GHIONE Giovanni; CAPPELLUTI Federica; MALAGONI BUIATTI Gustavo	[View] [Download]
Abstract: A SPICE model of power PiN diodes is presented, based on the solution of the Ambipolar DiffusionEquation through the Finite Difference Method. The model is validated against experimentalcharacterizations of commercial devices for on-state and reverse-recovery operation. Simulation examplesof practical Switched-Mode Power Supplies (SMPS) are provided, in order to demonstrate the modeleffectiveness, speed and convergence properties.

	Universal Power Losses Estimator for Low Voltage IGCTs Switching Cells By ALVAREZ Silverio; LADOUX Philippe	[View] [Download]
Abstract: The paper presents an accurate “universal” power losses estimator for Low Voltage IGCTs (3.3kV) switching cells useful to evaluate their operation within different topologies. The proposed estimator is based on the ideal switches simulation approach, and it considers relevant factors than influence the losses of high power converters such as output current ripple, DC link voltage fluctuations, over-modulation and closed loop operation. Also, the principle of this estimator can be applied to other semiconductors such as IGBTs. This tool can help to compare the suitability of different power converter topologies and/or semiconductor technologies for their use into a specific application, leading to the final selection of the system. Here, as an application example of the universal power losses estimator, a LV IGCTs based reactive power compensator for single-phase system is presented.