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A new Trench IGBT distributed model with thermo-sensible parameters.
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| Author(s) |
ELGHAZOUANI Mohamed; MUSSARD Lionel; DE MAGLIE Rodolphe; SANCHEZ Jea; SCHANEN Jea; RICHARDEAU Frederic; AUSTIN Patrick |
| Abstract |
In this paper, a one-dimensional physical model with thermally dependent parameters of the Trench InsulatedGate Bipolar Transistor (TIGBT) is presented. This model is implemented in the Saber simulator inMAST language. Simulation and experimental results are compared for different temperatures in orderto validate the model in adiabatic conditions. |
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| Filename: | 0722 |
| Filesize: | 1.285 MB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-05 by System |
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