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Accurate Behavioural Modelling Of Power MOSFETs Based On Device Measurements And FE-Simulations
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| Author(s) |
LOPEZ Toni; ELFERICH Reinhold; KOPER Nick |
| Abstract |
Optimization of low voltage power MOSFETs in hard-switching high frequency power converters needs accurate models. This paper deals with a behavioural modelling approach, which employs look-up tables and fitting functions describing the device’s characteristics. The required model data can be derived from extensive measurements or alternatively, from finite element (FE) device simulations. Both ways are outlined and compared. A simulation example of a step-down converter shows a typical switching transient and demonstrates the effects covered by the model. |
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| Filename: | 0708 |
| Filesize: | 1.187 MB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-05 by System |
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