EPE Association: EPE 2005 - Topic 01-5a - DS: MOS controlled silicon power devices (e.g. IGBT, MOSFET)

EPE 2005 - Topic 01-5a - DS: MOS controlled silicon power devices (e.g. IGBT, MOSFET)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-5a - DS: MOS controlled silicon power devices (e.g. IGBT, MOSFET)

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   A Fast Power Loss Calculation Method for Long Real Time Thermal Simulation of IGBT modules for a Three-Phase Inverter System
By ZHOU Zhongfu [View]
[Download]

Abstract: A fast power losses calculation method for long real time thermal simulation of IGBT module for a three-phase inverter system is presented in this paper. The speed-up is obtained by simplifying the representation of the three-phase inverter at the system modelling stage this allows a inverter system to be simulated predicting the effective voltages and currents whilst using large time-step. An average power losses is calculated during each clock period, using a pre-defined look-up table, which stores the switching and on-state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art-device compact models and a realistic simulation of the thermal performance in a useable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach

   An Avalanche Rugged NPT Trench IGBT used in Single-Ended Quasi Resonant Topology for Induction Heating Appliance
By LEE Ky; YUN Chon; OH Kwan; KIM Youn [View]
[Download]

Abstract: A 1000V NPT (non-punch through) trench IGBT is developed for the single-ended quasi resonant circuit. Optimizing trench cell design and NPT technology, high avalanche ruggedness as well as the outstanding static and dynamic performances is obtained. Comparing the PT trench IGBT having the identical design and processes, it is also empirically shown that the developed NPT trench IGBT has significantly improved avalanche capability under the various test conditions for the IH application using the quasi resonant topology and reduces the instantaneous device failures resulting from inadequate avalanche ruggedness under abnormal operating condition.

   Effect of the High Input Capacitance of 1200V Trench IGBT on the Switching Characteristics under Inductive Load
By WOIRGARD Eric; AZZOPARDI Stephane; BENMANSOUR Adel; BRIAT Olivier; VINASSA Jea [View]
[Download]

Abstract: In this study, we focus on the effect of the input capacitance of 1200V Trench (T) IGBT on the switching waveforms under clamped inductive load. For a given gate resistance, due to the trench gate oxide structure, the trench device presents a higher input impedance than the Planar (P) IGBT, which is responsible for a high switching time during turn-on. In the case of the trench device, whereas the gate voltage waveforms are relatively usual, the collector current waveforms are strongly modified compared to the planar device. The influence of the gate resistance value on the switching waveforms during turn-on and turn-off is analyzed in details with the help of experimental data. Some additional results allowing to see the influence of the dv/dt and based on simulation are also presented.

   Fast over-current protection of high power IGBT modules
By BERGOGNE Dominique ; ALLARD Bruno; ROCHE Jea; MOREL Herve; LEFRANC Pierre [View]
[Download]

Abstract: IGBT high power modules are protected against over-current and short-circuit. These phenomena are defined and classical methods are explained. A new protection circuit is presented with the help of a formal approach for enhanced response time. Experimental results are used for validation.

   High Frequency Power Switch - Improved Performance by MOSFETs and IGBTs Connected in Parallel
By KAERST Jens Peter; HOFFMANN Klaus F. [View]
[Download]

Abstract: For many high power applications semiconductors are desirable which combine the excellent switching characteristics of a MOSFET with the good conducting behaviour of an IGBT. This paper presents hybrid power switches for higher frequencies with an improved performance based on the parallel connection of corresponding MOSFETs and IGBTs. The objectives are to combine the advantages of both the unipolar and the bipolar power semiconductors by avoiding the drawbacks of these different semiconductor types. The proposed hybrid power switches have been analyzed in a hard-switching converter under different operation conditions as well as in a ZVS inverter with resonant load. For this different IGBT types have been connected in parallel to super-junction MOSFETs. The performances of the resulting power switches depend strongly on the chip structure and the conductivity modulation of the bipolar devices. In this paper these dependencies and their effects have been taken into account.

   High Speed Complementary Drive of a Hybrid MOSFET and IGBT Power Switch
By KAERST Jens Peter; HOFFMANN Klaus F. [View]
[Download]

Abstract: The hybrid integration of an unipolar and a bipolar power semiconductor in parallel combines their advantages whilst avoiding their disadvantages. The drawback of this approach is an increased complexity of the gate drive.This paper proposes a simple hardware solution utilising a transductor to transmit both drive and control energy together with a slow optocoupler providing an enable signal for the respective hybrid switch. Questions regarding the choice of an optimal switching frequency are addressed.

   Investigations of parallel connected IGBT's using Electromagnetic field analysis
By HIROSHI Yamaguchi; ECKHARD Thal; YASUSHI Nakayama; OSAMU Usui; YAMAGUCHI Yoshihiro; TAKASHI Ohi; SHUICHI Kitamura; KAZUHIRO Morishita [View]
[Download]

Abstract: Chip current imbalances caused by the structure and layout of main circuit and gete circuit in an Insulated Gate Bipolar Transistor (IGBT) module were analyzed using three-dimensional electromagnetic analysis. To confirm the results of the analysis,we also measured the current of each chip using a test module. A good agreement between the analytical result and the measurement result was acheived. Furthermore,we were able to specify the key factors of current imbalance and the effectiveness of the design three-dimensional electromagnetic analysis was proven.

   Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Gate Bias and High Temperature Reverse Bias Stresses - Hard-Switching Performances E
By TAL; BOUDART Bertrand; MAIGA Cheick Oumar; TOUTAH Hamid [View]
[Download]

Abstract: The work presented in this paper is concerned with the effects of a High Temperature Gate Bias (HTGB) and a High Temperature Reverse Bias (HTRB) stresses on Non-Punch-Through IGBTs. The stresses were achieved during 1200 hours at 140°C. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a Pulse Width Modulation (PWM) inverter operation is presented.

   Technological realization of low on-resistance FLYMOS™ transistors dedicated to automotive applications
By MARGHERITTA Joël; DERAM Ivana; REYNES Jea; ISOIRD Karine; MORANCHO Frederic; TRANDUC Henri; ALVES Stephane [View]
[Download]

Abstract: The present 14 Volts automotive electrical system will soon become 42 Volts. For these future automotive applications, development of 80 Volts power MOSFETs exhibiting low on-resistance is desired. The“FLoating Island” MOSFET (FLIMOSFET) is one of the new candidates to break the silicon limit, which is the “specific on-resistance / breakdown voltage” trade-off limit of conventional power MOSFETs. Inthis paper, the “FLoating Island” concept has been implemented on silicon: new vertical N-channel FLIMOSFETs (FLYMOS™) dedicated to automotive applications (below 100 Volts) have beenfabricated for the first time, using two steps epitaxy process. Experimental results show that FLYMOS™ transistors exhibit lower breakdown voltages than what was expected by simulations (maximum of 73Volts) but also improved specific on-resistances compared to the conventional VDMOSFET (33\% improvement of the specific on-resistance for the same breakdown voltage). In other words, in terms of“specific on-resistance / breakdown voltage” trade-off, the FLYMOS™ is one of the best MOS devices in low voltage applications. These measurements validate the “FLoating Island” concept and the efficiency of the original edge cell that is used in the FLYMOS™ technology.

EPE 2005 - Topic 01-5a - DS: MOS controlled silicon power devices (e.g. IGBT, MOSFET)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-5a - DS: MOS controlled silicon power devices (e.g. IGBT, MOSFET)
	[return to parent folder]

	A Fast Power Loss Calculation Method for Long Real Time Thermal Simulation of IGBT modules for a Three-Phase Inverter System By ZHOU Zhongfu	[View] [Download]
Abstract: A fast power losses calculation method for long real time thermal simulation of IGBT module for a three-phase inverter system is presented in this paper. The speed-up is obtained by simplifying the representation of the three-phase inverter at the system modelling stage this allows a inverter system to be simulated predicting the effective voltages and currents whilst using large time-step. An average power losses is calculated during each clock period, using a pre-defined look-up table, which stores the switching and on-state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art-device compact models and a realistic simulation of the thermal performance in a useable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach

	An Avalanche Rugged NPT Trench IGBT used in Single-Ended Quasi Resonant Topology for Induction Heating Appliance By LEE Ky; YUN Chon; OH Kwan; KIM Youn	[View] [Download]
Abstract: A 1000V NPT (non-punch through) trench IGBT is developed for the single-ended quasi resonant circuit. Optimizing trench cell design and NPT technology, high avalanche ruggedness as well as the outstanding static and dynamic performances is obtained. Comparing the PT trench IGBT having the identical design and processes, it is also empirically shown that the developed NPT trench IGBT has significantly improved avalanche capability under the various test conditions for the IH application using the quasi resonant topology and reduces the instantaneous device failures resulting from inadequate avalanche ruggedness under abnormal operating condition.

	Effect of the High Input Capacitance of 1200V Trench IGBT on the Switching Characteristics under Inductive Load By WOIRGARD Eric; AZZOPARDI Stephane; BENMANSOUR Adel; BRIAT Olivier; VINASSA Jea	[View] [Download]
Abstract: In this study, we focus on the effect of the input capacitance of 1200V Trench (T) IGBT on the switching waveforms under clamped inductive load. For a given gate resistance, due to the trench gate oxide structure, the trench device presents a higher input impedance than the Planar (P) IGBT, which is responsible for a high switching time during turn-on. In the case of the trench device, whereas the gate voltage waveforms are relatively usual, the collector current waveforms are strongly modified compared to the planar device. The influence of the gate resistance value on the switching waveforms during turn-on and turn-off is analyzed in details with the help of experimental data. Some additional results allowing to see the influence of the dv/dt and based on simulation are also presented.

	Fast over-current protection of high power IGBT modules By BERGOGNE Dominique ; ALLARD Bruno; ROCHE Jea; MOREL Herve; LEFRANC Pierre	[View] [Download]
Abstract: IGBT high power modules are protected against over-current and short-circuit. These phenomena are defined and classical methods are explained. A new protection circuit is presented with the help of a formal approach for enhanced response time. Experimental results are used for validation.

	High Frequency Power Switch - Improved Performance by MOSFETs and IGBTs Connected in Parallel By KAERST Jens Peter; HOFFMANN Klaus F.	[View] [Download]
Abstract: For many high power applications semiconductors are desirable which combine the excellent switching characteristics of a MOSFET with the good conducting behaviour of an IGBT. This paper presents hybrid power switches for higher frequencies with an improved performance based on the parallel connection of corresponding MOSFETs and IGBTs. The objectives are to combine the advantages of both the unipolar and the bipolar power semiconductors by avoiding the drawbacks of these different semiconductor types. The proposed hybrid power switches have been analyzed in a hard-switching converter under different operation conditions as well as in a ZVS inverter with resonant load. For this different IGBT types have been connected in parallel to super-junction MOSFETs. The performances of the resulting power switches depend strongly on the chip structure and the conductivity modulation of the bipolar devices. In this paper these dependencies and their effects have been taken into account.

	High Speed Complementary Drive of a Hybrid MOSFET and IGBT Power Switch By KAERST Jens Peter; HOFFMANN Klaus F.	[View] [Download]
Abstract: The hybrid integration of an unipolar and a bipolar power semiconductor in parallel combines their advantages whilst avoiding their disadvantages. The drawback of this approach is an increased complexity of the gate drive.This paper proposes a simple hardware solution utilising a transductor to transmit both drive and control energy together with a slow optocoupler providing an enable signal for the respective hybrid switch. Questions regarding the choice of an optimal switching frequency are addressed.

	Investigations of parallel connected IGBT's using Electromagnetic field analysis By HIROSHI Yamaguchi; ECKHARD Thal; YASUSHI Nakayama; OSAMU Usui; YAMAGUCHI Yoshihiro; TAKASHI Ohi; SHUICHI Kitamura; KAZUHIRO Morishita	[View] [Download]
Abstract: Chip current imbalances caused by the structure and layout of main circuit and gete circuit in an Insulated Gate Bipolar Transistor (IGBT) module were analyzed using three-dimensional electromagnetic analysis. To confirm the results of the analysis,we also measured the current of each chip using a test module. A good agreement between the analytical result and the measurement result was acheived. Furthermore,we were able to specify the key factors of current imbalance and the effectiveness of the design three-dimensional electromagnetic analysis was proven.

	Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Gate Bias and High Temperature Reverse Bias Stresses - Hard-Switching Performances E By TAL; BOUDART Bertrand; MAIGA Cheick Oumar; TOUTAH Hamid	[View] [Download]
Abstract: The work presented in this paper is concerned with the effects of a High Temperature Gate Bias (HTGB) and a High Temperature Reverse Bias (HTRB) stresses on Non-Punch-Through IGBTs. The stresses were achieved during 1200 hours at 140°C. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a Pulse Width Modulation (PWM) inverter operation is presented.

	Technological realization of low on-resistance FLYMOS™ transistors dedicated to automotive applications By MARGHERITTA Joël; DERAM Ivana; REYNES Jea; ISOIRD Karine; MORANCHO Frederic; TRANDUC Henri; ALVES Stephane	[View] [Download]
Abstract: The present 14 Volts automotive electrical system will soon become 42 Volts. For these future automotive applications, development of 80 Volts power MOSFETs exhibiting low on-resistance is desired. The“FLoating Island” MOSFET (FLIMOSFET) is one of the new candidates to break the silicon limit, which is the “specific on-resistance / breakdown voltage” trade-off limit of conventional power MOSFETs. Inthis paper, the “FLoating Island” concept has been implemented on silicon: new vertical N-channel FLIMOSFETs (FLYMOS™) dedicated to automotive applications (below 100 Volts) have beenfabricated for the first time, using two steps epitaxy process. Experimental results show that FLYMOS™ transistors exhibit lower breakdown voltages than what was expected by simulations (maximum of 73Volts) but also improved specific on-resistances compared to the conventional VDMOSFET (33\% improvement of the specific on-resistance for the same breakdown voltage). In other words, in terms of“specific on-resistance / breakdown voltage” trade-off, the FLYMOS™ is one of the best MOS devices in low voltage applications. These measurements validate the “FLoating Island” concept and the efficiency of the original edge cell that is used in the FLYMOS™ technology.