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Investigations of parallel connected IGBT's using Electromagnetic field analysis
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| Author(s) |
HIROSHI Yamaguchi; ECKHARD Thal; YASUSHI Nakayama; OSAMU Usui; YAMAGUCHI Yoshihiro; TAKASHI Ohi; SHUICHI Kitamura; KAZUHIRO Morishita |
| Abstract |
Chip current imbalances caused by the structure and layout of main circuit and gete circuit in an Insulated Gate Bipolar Transistor (IGBT) module were analyzed using three-dimensional electromagnetic analysis. To confirm the results of the analysis,we also measured the current of each chip using a test module. A good agreement between the analytical result and the measurement result was acheived. Furthermore,we were able to specify the key factors of current imbalance and the effectiveness of the design three-dimensional electromagnetic analysis was proven. |
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| Filename: | 0731 |
| Filesize: | 611.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-05 by System |
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