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High Speed Complementary Drive of a Hybrid MOSFET and IGBT Power Switch
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| Author(s) |
KAERST Jens Peter; HOFFMANN Klaus F. |
| Abstract |
The hybrid integration of an unipolar and a bipolar power semiconductor in parallel combines their advantages whilst avoiding their disadvantages. The drawback of this approach is an increased complexity of the gate drive.This paper proposes a simple hardware solution utilising a transductor to transmit both drive and control energy together with a slow optocoupler providing an enable signal for the respective hybrid switch. Questions regarding the choice of an optimal switching frequency are addressed. |
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| Filename: | 0685 |
| Filesize: | 390.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-05 by System |
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