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Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Gate Bias and High Temperature Reverse Bias Stresses - Hard-Switching Performances E
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| Author(s) |
TAL; BOUDART Bertrand; MAIGA Cheick Oumar; TOUTAH Hamid |
| Abstract |
The work presented in this paper is concerned with the effects of a High Temperature Gate Bias (HTGB) and a High Temperature Reverse Bias (HTRB) stresses on Non-Punch-Through IGBTs. The stresses were achieved during 1200 hours at 140°C. A particular interest was taken in the parameters related to the switching mode operation and experimental results on their evolution under the two types of stress are presented in a quantified way. A qualitative analysis of the switching times effects, due to the IGBTs ageing, on a Pulse Width Modulation (PWM) inverter operation is presented. |
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| Filename: | 0288 |
| Filesize: | 375.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-07 by System |
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