EPE Association: EPE-PEMC 2004 - Topic 01-7: New devices

EPE-PEMC 2004 - Topic 01-7: New devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2004 - Conference > EPE-PEMC 2004 - Topic 01: DEVICES > EPE-PEMC 2004 - Topic 01-7: New devices

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   New Concepts For High-Power Bimos-Devices
By Rik W. De Doncker, Dirk Detjen, Thomas Plum [View]
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Abstract: The development of new and innovative highpower semiconductor devices is always constrained by state-of-the-art fabrication technologies. To achieve better switching characteristics, double-gated device structures would be desirable. Direct inverter concepts such as matrix- or cyclo-converters could be realized with a minimum of semiconductors if bi-directional switches were obtainable. The potential benefits of thyristor type BIMOS-device structures, such as MTO and ETO, can be more significant if these semiconductors could be realized in a more integrated design. In this paper, new concepts for different types of highpower thyristor-type devices are shown, which achieve previously mentioned desirable properties. The realization of these structures is based on hydrophobic silicon-silicon bonding technology.

   Possibilities Of Realization Of Ac Transistors
By Ilgaitis Prusis, Ivars Rankis, Leonids Ribickis [View]
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Abstract: An article deals with possibility of realization of AC transistor, which can conduct controlled current in the both directions. Are proposed possible scheme of realization and given a static characteristics described by suggested equations.

   The Optimization Of Relative Current Sensitivity Of Bipolar Magnetotransistor
By A. V. Kozlov, R. D. Tikhonov [View]
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Abstract: Using the methods of numerical device-and-process simulation we investigated the current distribution and the relative and absolute current sensitivity of the lateral bipolar dual-collector magnetotransistor (BMT) made in the diffusion well and with the substrate and well contacts connected. The analysis of the current flow at low injection level revealed the negative sensitivity mechanism. The negative relative current sensitivity appears in BMT as a result of the involved in recombination electron and hole flows redistribution induced by magnetic field, i.e., as the result of concentration-recombination mechanism of magnetosensitivity. The optimization of structure of BMT allows increasing the maximal meaning of relative current sensitivity approximately three times.

EPE-PEMC 2004 - Topic 01-7: New devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2004 - Conference > EPE-PEMC 2004 - Topic 01: DEVICES > EPE-PEMC 2004 - Topic 01-7: New devices
	[return to parent folder]

	New Concepts For High-Power Bimos-Devices By Rik W. De Doncker, Dirk Detjen, Thomas Plum	[View] [Download]
Abstract: The development of new and innovative highpower semiconductor devices is always constrained by state-of-the-art fabrication technologies. To achieve better switching characteristics, double-gated device structures would be desirable. Direct inverter concepts such as matrix- or cyclo-converters could be realized with a minimum of semiconductors if bi-directional switches were obtainable. The potential benefits of thyristor type BIMOS-device structures, such as MTO and ETO, can be more significant if these semiconductors could be realized in a more integrated design. In this paper, new concepts for different types of highpower thyristor-type devices are shown, which achieve previously mentioned desirable properties. The realization of these structures is based on hydrophobic silicon-silicon bonding technology.

	Possibilities Of Realization Of Ac Transistors By Ilgaitis Prusis, Ivars Rankis, Leonids Ribickis	[View] [Download]
Abstract: An article deals with possibility of realization of AC transistor, which can conduct controlled current in the both directions. Are proposed possible scheme of realization and given a static characteristics described by suggested equations.

	The Optimization Of Relative Current Sensitivity Of Bipolar Magnetotransistor By A. V. Kozlov, R. D. Tikhonov	[View] [Download]
Abstract: Using the methods of numerical device-and-process simulation we investigated the current distribution and the relative and absolute current sensitivity of the lateral bipolar dual-collector magnetotransistor (BMT) made in the diffusion well and with the substrate and well contacts connected. The analysis of the current flow at low injection level revealed the negative sensitivity mechanism. The negative relative current sensitivity appears in BMT as a result of the involved in recombination electron and hole flows redistribution induced by magnetic field, i.e., as the result of concentration-recombination mechanism of magnetosensitivity. The optimization of structure of BMT allows increasing the maximal meaning of relative current sensitivity approximately three times.