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The Optimization Of Relative Current Sensitivity Of Bipolar Magnetotransistor
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| Author(s) |
A. V. Kozlov, R. D. Tikhonov |
| Abstract |
Using the methods of numerical device-and-process
simulation we investigated the current distribution and the
relative and absolute current sensitivity of the lateral bipolar
dual-collector magnetotransistor (BMT) made in the diffusion
well and with the substrate and well contacts connected. The
analysis of the current flow at low injection level revealed the
negative sensitivity mechanism. The negative relative current
sensitivity appears in BMT as a result of the involved in
recombination electron and hole flows redistribution induced by
magnetic field, i.e., as the result of concentration-recombination
mechanism of magnetosensitivity. The optimization of structure
of BMT allows increasing the maximal meaning of relative
current sensitivity approximately three times. |
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| Filename: | A17374 |
| Filesize: | 230.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
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