| |
New Concepts For High-Power Bimos-Devices
| [View]
[Download]
|
| Author(s) |
Rik W. De Doncker, Dirk Detjen, Thomas Plum |
| Abstract |
The development of new and innovative highpower
semiconductor devices is always constrained by
state-of-the-art fabrication technologies. To achieve better
switching characteristics, double-gated device structures
would be desirable. Direct inverter concepts such as
matrix- or cyclo-converters could be realized with a
minimum of semiconductors if bi-directional switches
were obtainable. The potential benefits of thyristor type
BIMOS-device structures, such as MTO and ETO, can be
more significant if these semiconductors could be realized
in a more integrated design.
In this paper, new concepts for different types of highpower
thyristor-type devices are shown, which achieve
previously mentioned desirable properties. The realization
of these structures is based on hydrophobic silicon-silicon
bonding technology. |
| Download |
| Filename: | K02 |
| Filesize: | 269 KB |
|
| Type |
Members Only |
| Date |
Last modified 2006-02-15 by System |
| |
 |