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Electrical Behaviour of a New Gallium Arsenide Power Schottky Diode
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| Author(s) |
A. Lindemann; St. Knigge |
| Abstract |
This paper presents new galium arsenide power Schottky diodes with blocking voltages of some hundreds of volts. Chips have been developed, processed and packaged. Electrical measurements show exceptionally fast reverse recovery and low forward voltage combined with high temperature capability and low parameter variations. These results promise the new diodes will permit further progress in high frequency power converter technology. |
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| Filename: | EPE1999 - PP00048 - Lindemann.pdf |
| Filesize: | 106.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-03-23 by System |
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