By Seyed Mojtaba JAZAYERI, Javad NAGHIBI, Sadegh MOHSENZADE, Kamyar MEHRAN
| EPE 2025 - DS1n: Reliability and Life-Cycle Assessment | ||
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| | A Real-time Condition Monitoring Technique for SiC MOSFET Gate Oxide Degradation Based on Turn-Off Delay Time Interval
By Seyed Mojtaba JAZAYERI, Javad NAGHIBI, Sadegh MOHSENZADE, Kamyar MEHRAN | |
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Abstract: Gate oxide degradation can be regarded as one of the major categories of chip-related reliability issues in Silicon Carbide MOSFETs. This paper proposes an online condition monitoring technique (CMT) based on turn-off delay time as a precursor for gate oxide degradation. The method is real-time and does not need any change into the device's normal operation. The experimental results showed the proposed technique can provide a high-resolution assessment of the gate oxide degradation level of the device.
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