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A Real-time Condition Monitoring Technique for SiC MOSFET Gate Oxide Degradation Based on Turn-Off Delay Time Interval
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| Author(s) |
Seyed Mojtaba JAZAYERI, Javad NAGHIBI, Sadegh MOHSENZADE, Kamyar MEHRAN |
| Abstract |
Gate oxide degradation can be regarded as one of the major categories of chip-related reliability issues in Silicon Carbide MOSFETs. This paper proposes an online condition monitoring technique (CMT) based on turn-off delay time as a precursor for gate oxide degradation. The method is real-time and does not need any change into the device's normal operation. The experimental results showed the proposed technique can provide a high-resolution assessment of the gate oxide degradation level of the device. |
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| Filename: | 0251-epe2025-full-16423036.pdf |
| Filesize: | 4.763 MB |
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| Type |
Members Only |
| Date |
Last modified 2025-08-31 by System |
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