EPE Association: EPE 2023 - DS1a: Active Devices and Components (Si)

EPE 2023 - DS1a: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - DS1a: Active Devices and Components (Si)

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   Design and Implementation of a High-Power, Discrete IGBT-Based Electric Drive for Rapid Accelerations
By Waqas ALI, Kedar JOSHI, Ara BISSAL, Martin MAERZ [View]
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Abstract: The increasing adoption of direct current (DC) systems, driven by renewable energy sources anddiverse DC loads highlights the need for efficient fault protection mechanisms. This research paper presents a cost-effective and compact 500A electric drive system specifically designed for an axial flux machine-based actuator in a hybrid DC breaker application. The study introduces a simulation model of the electric drive system using MATLAB Simulink, incorporating a timebased modulation scheme for precise constant current control. Experimental tests were conducted to validate the drive's performance. The results demonstrate that increasing the gate voltage from 15V to 25 V, a singlediscrete insulated gate bipolar transistor (IGBT) in a TO-247 package efficiently handles a constant current of 500A for 1 ms, surpassing its nominal current by a factor of five. This capability enables the motor to generate high accelerations. The research also discusses in detail the factors, energy losses, junction temperature rise, gate voltage limitations, and the reverse-biased safe operating area (RBSOA), ensuring the drive's reliability. Furthermore, the utilization of an ultrafast soft recoverydiode with a reverse recovery time of 29 ns ensures nearzero diode reverse recovery current, leading to reduced IGBT switching losses.

   Fully Automated Wide Temperature Range Semiconductor Characterization
By Simon Robin FRANK, Jan HANSEL, Jannik BITTERLE, RÃ¼diger SCHWENDEMANN, Marc HILLER [View]
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Abstract: This paper introduces a fully automatedtest bench for -75Â°C up to 160Â°C static and dynamicsemiconductor characterization. First measurements performedwith a 1.2 kV, 200 A Si-IGBT module and a 1.2 kV,250 A SiC-MOSFET module show better semiconductorperformance at lower temperatures compared to the conventionalhigh temperature operation.

   Loss Measurement of Low R\_DS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On
By JosÃ© Miguel SANZ-ALCAINE, Franciso JosÃ© PÃ‰REZ-CEBOLLA, Carlos BERNAL-RUIZ, Asier ARRUTI, Iosu AIZPURU, Juan SANCHEZ [View]
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Abstract: This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is based on the transistor current regulation with low gate voltages and the linearity between power and temperature, being useful for all transistor technologies (Si, SiC and GaN). Through this method, low DC currents are enough to bring transistors to their thermal limits. Thermal stability issues and their differences between technologies are discussed and an experimental validation of the method is carried out.

EPE 2023 - DS1a: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - DS1a: Active Devices and Components (Si)
	[return to parent folder]

	Design and Implementation of a High-Power, Discrete IGBT-Based Electric Drive for Rapid Accelerations By Waqas ALI, Kedar JOSHI, Ara BISSAL, Martin MAERZ	[View] [Download]
Abstract: The increasing adoption of direct current (DC) systems, driven by renewable energy sources anddiverse DC loads highlights the need for efficient fault protection mechanisms. This research paper presents a cost-effective and compact 500A electric drive system specifically designed for an axial flux machine-based actuator in a hybrid DC breaker application. The study introduces a simulation model of the electric drive system using MATLAB Simulink, incorporating a timebased modulation scheme for precise constant current control. Experimental tests were conducted to validate the drive's performance. The results demonstrate that increasing the gate voltage from 15V to 25 V, a singlediscrete insulated gate bipolar transistor (IGBT) in a TO-247 package efficiently handles a constant current of 500A for 1 ms, surpassing its nominal current by a factor of five. This capability enables the motor to generate high accelerations. The research also discusses in detail the factors, energy losses, junction temperature rise, gate voltage limitations, and the reverse-biased safe operating area (RBSOA), ensuring the drive's reliability. Furthermore, the utilization of an ultrafast soft recoverydiode with a reverse recovery time of 29 ns ensures nearzero diode reverse recovery current, leading to reduced IGBT switching losses.

	Fully Automated Wide Temperature Range Semiconductor Characterization By Simon Robin FRANK, Jan HANSEL, Jannik BITTERLE, RÃ¼diger SCHWENDEMANN, Marc HILLER	[View] [Download]
Abstract: This paper introduces a fully automatedtest bench for -75Â°C up to 160Â°C static and dynamicsemiconductor characterization. First measurements performedwith a 1.2 kV, 200 A Si-IGBT module and a 1.2 kV,250 A SiC-MOSFET module show better semiconductorperformance at lower temperatures compared to the conventionalhigh temperature operation.

	Loss Measurement of Low R\_DS Devices Through Thermal Modelling - The Advantage of Not Turning it Fully On By JosÃ© Miguel SANZ-ALCAINE, Franciso JosÃ© PÃ‰REZ-CEBOLLA, Carlos BERNAL-RUIZ, Asier ARRUTI, Iosu AIZPURU, Juan SANCHEZ	[View] [Download]
Abstract: This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is based on the transistor current regulation with low gate voltages and the linearity between power and temperature, being useful for all transistor technologies (Si, SiC and GaN). Through this method, low DC currents are enough to bring transistors to their thermal limits. Thermal stability issues and their differences between technologies are discussed and an experimental validation of the method is carried out.