EPE Association: EPE 2023 - LS1b: Active Devices and Components (Si)

EPE 2023 - LS1b: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - LS1b: Active Devices and Components (Si)

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   Boosting efficiency in resonant converters by the use of a new advanced power MOSFET technology
By Ralf SIEMIENIEC, Simone MAZZER, Cesar BRAZ, Gerhard NOEBAUER, David LAFORET, Elias PREE, Alessandro FERRARA [View]
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Abstract: This work discusses the advantages of a new trench power MOSFET technology applying a new design approach. Along with the improvements recorded in the main switching figures of merit, the recently introduced technology is also proven to shine in soft-switching ZVS applications. It is shown how the new device design practically eliminates one of the loss mechanisms in the device itself when operated in ZVS, supporting a clear improvement in the overall system efficiency.

   IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions
By Xing LIU, Xupeng LI, Josef LUTZ, Thomas BASLER, Jan FUHRMANN, Hans-Günter ECKEL [View]
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Abstract: In this paper, the interaction between the Insulated Gate Bipolar Transistor (IGBT) and the Free-Wheeling Diode (FWD) in the short circuit type III (SC III) failure has been studied. The influence of the different operation conditions, like the load current and temperature, are investigated. Furthermore, external factors such as gate impedance, packaging style, and the different diode technologies are discussed. Since the paralleled diode is in the conducting mode before the short circuit, the plasma inside the bipolar silicon (Si) diode and the reverse recovery behavior play essential roles in the short circuit behavior of the IGBT. Under certain conditions, the short circuit stress of the IGBT can be minor and the diode enters the regime of the dynamic avalanche. Moreover, TCAD simulations have been carried out to analyze the internal behavior of IGBT and diode during the SC type III event.

   Systematic Derivation and Experimental Verification of a Compact Loss Model for Soft-switching Half-bridges
By Tianxiao CHEN, Pedro Andre MARTINS BEZERRA, Zhengyan HE, Gengqi LI, Eckart HOENE [View]
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Abstract: Soft-switching Half-Bridges (HBs) experi-ence switching losses, even under zero-voltage-switching(ZVS) conditions, due to hysteresis losses during thecharging and discharging of the output capacitor inthe switching devices. This paper presents a systematicderivation and experimental verification of a compact lossmodel that incorporates hysteresis losses for soft-switchingHBs. The model is generated by extracting parasitics,including measuring hysteresis losses using the Sawyer-Tower Method (STM). The hysteresis losses are modeledas losses occurring on an equivalent resistor connectedin series with the output capacitor. Measurement resultsindicate that at test frequencies above 10 MHz, hysteresislosses can account for over 30\% of the energy stored in theoutput capacitor for tested low-voltage Si MOSFETs. Thisfinding demonstrates the significant impact of hysteresislosses on damping effects following switching events. Theproposed model is verified through the Double Pulse Test(DPT), with a prediction error of switching-off losses below10\% under different operating conditions.

EPE 2023 - LS1b: Active Devices and Components (Si)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 01: Devices, Packaging and System Integration > EPE 2023 - LS1b: Active Devices and Components (Si)
	[return to parent folder]

	Boosting efficiency in resonant converters by the use of a new advanced power MOSFET technology By Ralf SIEMIENIEC, Simone MAZZER, Cesar BRAZ, Gerhard NOEBAUER, David LAFORET, Elias PREE, Alessandro FERRARA	[View] [Download]
Abstract: This work discusses the advantages of a new trench power MOSFET technology applying a new design approach. Along with the improvements recorded in the main switching figures of merit, the recently introduced technology is also proven to shine in soft-switching ZVS applications. It is shown how the new device design practically eliminates one of the loss mechanisms in the device itself when operated in ZVS, supporting a clear improvement in the overall system efficiency.

	IGBT and Free-Wheeling Diode Behavior during the Short Circuit Type III with varied Operation Conditions By Xing LIU, Xupeng LI, Josef LUTZ, Thomas BASLER, Jan FUHRMANN, Hans-Günter ECKEL	[View] [Download]
Abstract: In this paper, the interaction between the Insulated Gate Bipolar Transistor (IGBT) and the Free-Wheeling Diode (FWD) in the short circuit type III (SC III) failure has been studied. The influence of the different operation conditions, like the load current and temperature, are investigated. Furthermore, external factors such as gate impedance, packaging style, and the different diode technologies are discussed. Since the paralleled diode is in the conducting mode before the short circuit, the plasma inside the bipolar silicon (Si) diode and the reverse recovery behavior play essential roles in the short circuit behavior of the IGBT. Under certain conditions, the short circuit stress of the IGBT can be minor and the diode enters the regime of the dynamic avalanche. Moreover, TCAD simulations have been carried out to analyze the internal behavior of IGBT and diode during the SC type III event.

	Systematic Derivation and Experimental Verification of a Compact Loss Model for Soft-switching Half-bridges By Tianxiao CHEN, Pedro Andre MARTINS BEZERRA, Zhengyan HE, Gengqi LI, Eckart HOENE	[View] [Download]
Abstract: Soft-switching Half-Bridges (HBs) experi-ence switching losses, even under zero-voltage-switching(ZVS) conditions, due to hysteresis losses during thecharging and discharging of the output capacitor inthe switching devices. This paper presents a systematicderivation and experimental verification of a compact lossmodel that incorporates hysteresis losses for soft-switchingHBs. The model is generated by extracting parasitics,including measuring hysteresis losses using the Sawyer-Tower Method (STM). The hysteresis losses are modeledas losses occurring on an equivalent resistor connectedin series with the output capacitor. Measurement resultsindicate that at test frequencies above 10 MHz, hysteresislosses can account for over 30\% of the energy stored in theoutput capacitor for tested low-voltage Si MOSFETs. Thisfinding demonstrates the significant impact of hysteresislosses on damping effects following switching events. Theproposed model is verified through the Double Pulse Test(DPT), with a prediction error of switching-off losses below10\% under different operating conditions.