EPE Association: EPE 2022 - LS4a: Invited Lectures - Integration and Adverse Effects of WBG Integration

EPE 2022 - LS4a: Invited Lectures - Integration and Adverse Effects of WBG Integration
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 12: > EPE 2022 - LS4a: Invited Lectures - Integration and Adverse Effects of WBG Integration

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   Driving Innovations for Power Electronics with Integratable and Sustainable Magnetics
By Matt WILKOWSKI [View]
[Download]

Abstract: Magnetics are historically one of the physically largest components in power distribution networksfrom milliwatts to megawatts. Consistent with the overall goal to reduce the visual presence of power converters that are necessary for continually advancing electronic devices, there is a continual push from the smallest to the largest power converters to have the magnetics blend in with other components of power delivery systems relative to their physical appearance, physical size, and cost. Power distribution systems will always require the magnetics function and accordingly the magnetics function will not disappear. This drives the term 'make magnetics invisible' or more realistically become indistinguishable from other components of the overall product assembly. The reality is thatmagnetics become less visible by moving towards more complete integration with the semiconductor devices at the Integrated Voltage Regulator (IVR) levels or by physical size reduction at the Solid-State Transformer (SST) levels. Integration and miniaturization are the main objectives for power magnetics across all power levels.

   Heterogeneous Integration of Power Conversion using Power Supply on Chip and Power Supply in Package
By Cian O MATHUNA [View]
[Download]

Abstract: The talk will discuss the performance opportunities and technology challenges through the emergence of heterogeneous integration of power converters (including power management ICs, power switches, magnetics and capacitors) into processor packages using PCBembedding, 2.5D or even 3D packaging concepts to deliver significant system-level energy savings. This talk will discuss the impact of the commercial emergence, of magnetics-on-silicon technology and associated PCB-embedded magnetics technologies which are enabling Power Supply on Chip and Power Supply in Package platforms. These technologies, along with integrated high density capacitor technologies, PMICs and power switches, are central to the ongoing development of the concept of integrated, granular power for multi-coremicroprocessors and other complex system-on-chip (SOC) platforms.

   Impact of package technology on the switching behavior of high-voltage GaN FETs
By Sebastian KLÖTZER [View]
[Download]

Abstract: Package choice and assembly technique affect the performance of fast-switching high-voltage FETs.It is well known that GaN devices in particular benefit from advanced packaging technology withreduced stray inductance, but how much difference is really to be expected under typical applicationconditions_In this talk, switching waveforms for GaN FETs in a standard leaded, wire-bonded TO-type packageare analyzed and compared with those for an advanced copper-clip SMD package. The GaN FETsused are nearly identical, and so the differences are solely due to packaging. Subsequently, thedifferent fields of applications for which they are best suited are discussed.

EPE 2022 - LS4a: Invited Lectures - Integration and Adverse Effects of WBG Integration
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 12: > EPE 2022 - LS4a: Invited Lectures - Integration and Adverse Effects of WBG Integration
	[return to parent folder]

	Driving Innovations for Power Electronics with Integratable and Sustainable Magnetics By Matt WILKOWSKI	[View] [Download]
Abstract: Magnetics are historically one of the physically largest components in power distribution networksfrom milliwatts to megawatts. Consistent with the overall goal to reduce the visual presence of power converters that are necessary for continually advancing electronic devices, there is a continual push from the smallest to the largest power converters to have the magnetics blend in with other components of power delivery systems relative to their physical appearance, physical size, and cost. Power distribution systems will always require the magnetics function and accordingly the magnetics function will not disappear. This drives the term 'make magnetics invisible' or more realistically become indistinguishable from other components of the overall product assembly. The reality is thatmagnetics become less visible by moving towards more complete integration with the semiconductor devices at the Integrated Voltage Regulator (IVR) levels or by physical size reduction at the Solid-State Transformer (SST) levels. Integration and miniaturization are the main objectives for power magnetics across all power levels.

	Heterogeneous Integration of Power Conversion using Power Supply on Chip and Power Supply in Package By Cian O MATHUNA	[View] [Download]
Abstract: The talk will discuss the performance opportunities and technology challenges through the emergence of heterogeneous integration of power converters (including power management ICs, power switches, magnetics and capacitors) into processor packages using PCBembedding, 2.5D or even 3D packaging concepts to deliver significant system-level energy savings. This talk will discuss the impact of the commercial emergence, of magnetics-on-silicon technology and associated PCB-embedded magnetics technologies which are enabling Power Supply on Chip and Power Supply in Package platforms. These technologies, along with integrated high density capacitor technologies, PMICs and power switches, are central to the ongoing development of the concept of integrated, granular power for multi-coremicroprocessors and other complex system-on-chip (SOC) platforms.

	Impact of package technology on the switching behavior of high-voltage GaN FETs By Sebastian KLÖTZER	[View] [Download]
Abstract: Package choice and assembly technique affect the performance of fast-switching high-voltage FETs.It is well known that GaN devices in particular benefit from advanced packaging technology withreduced stray inductance, but how much difference is really to be expected under typical applicationconditions_In this talk, switching waveforms for GaN FETs in a standard leaded, wire-bonded TO-type packageare analyzed and compared with those for an advanced copper-clip SMD package. The GaN FETsused are nearly identical, and so the differences are solely due to packaging. Subsequently, thedifferent fields of applications for which they are best suited are discussed.