| Abstract |
Package choice and assembly technique affect the performance of fast-switching high-voltage FETs.It is well known that GaN devices in particular benefit from advanced packaging technology withreduced stray inductance, but how much difference is really to be expected under typical applicationconditions_In this talk, switching waveforms for GaN FETs in a standard leaded, wire-bonded TO-type packageare analyzed and compared with those for an advanced copper-clip SMD package. The GaN FETsused are nearly identical, and so the differences are solely due to packaging. Subsequently, thedifferent fields of applications for which they are best suited are discussed. |
