EPE Association: EPE 2022 - LS1a: Invited Lectures

EPE 2022 - LS1a: Invited Lectures - New Power Electronics Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 12: > EPE 2022 - LS1a: Invited Lectures - New Power Electronics Devices

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   3D Predictive Fatigue Modeling of Power Modules
By Ben SAMPLES [View]
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Abstract: As the demand for electric vehicles continues to grow, robust fatigue modeling tools will be a keyenabler in the success of power module products and technology. Predictive modeling tools can helppredict performance characteristics for customers, optimize design materials/geometries/features totake advantage of the superior characteristics of SiC, estimate fatigue and lifetime, reduce time tomarket by minimizing testing time and resources, and reduce product cost by minimizing unnecessaryover design.The fundamental challenge of simulating SiC power module characteristics is that they multi-physicsproblem comprised of several different fields including electrical, mechanical, thermal, chemical, andmaterial science as well as combinations of each. Therefore, the simulation tools must be capable ofcoupling multi-physics models, boundary conditions, and material properties to accurately predictpower module characteristics.In this presentation, a predictive fatigue model will be presented highlighting tradeoffs highlightingthe substrate attach thermal shock life based on sweeping multiple modules parameters.

   Hybrid Silicon-SiC Inverter - Combining the Best of Both Worlds
By Hans-Günter ECKEL [View]
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Abstract: SiC MOSFET get more and more attractive also for medium and high power inverters. There wellknown advantages are low switching losses and low on-state voltage at low current. But silicon IGBTstill offer a better cost to chip area ratio. The combination of Si-IGBT and SiC-MOSFET will lead toa better performance than pure silicon inverters with less SiC chip area than full-SiC solutions. Thismight lead to a superior performance cost ratio, especially for high power inverters with large chiparea. In this paper, different two level and three level hybrid topologies are investigated. Theswitching behavior of these Si-SiC-hybrids is experimental investigated, the maximum output powerand the efficiency is compared with full Si and full SiC inverters.

   Robustness of SiC Trench MOSFETs
By Christian FELGEMACHER [View]
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Abstract: In this presentation aspects regarding the robustness of state of the art SiC Trench MOSFETs will bediscussed. Results of short circuit test results on discrete devices as well as modules using multipleparallel SiC MOSFETs will be shown alongside measurements that demonstrate the timely detection and safe turn-off of both short-circuit type I and type II. As an additional aspect of device robustness results of cosmic radiation robustness tests executed on SiC MOSFETs will be presented.

EPE 2022 - LS1a: Invited Lectures - New Power Electronics Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 12: > EPE 2022 - LS1a: Invited Lectures - New Power Electronics Devices
	[return to parent folder]

	3D Predictive Fatigue Modeling of Power Modules By Ben SAMPLES	[View] [Download]
Abstract: As the demand for electric vehicles continues to grow, robust fatigue modeling tools will be a keyenabler in the success of power module products and technology. Predictive modeling tools can helppredict performance characteristics for customers, optimize design materials/geometries/features totake advantage of the superior characteristics of SiC, estimate fatigue and lifetime, reduce time tomarket by minimizing testing time and resources, and reduce product cost by minimizing unnecessaryover design.The fundamental challenge of simulating SiC power module characteristics is that they multi-physicsproblem comprised of several different fields including electrical, mechanical, thermal, chemical, andmaterial science as well as combinations of each. Therefore, the simulation tools must be capable ofcoupling multi-physics models, boundary conditions, and material properties to accurately predictpower module characteristics.In this presentation, a predictive fatigue model will be presented highlighting tradeoffs highlightingthe substrate attach thermal shock life based on sweeping multiple modules parameters.

	Hybrid Silicon-SiC Inverter - Combining the Best of Both Worlds By Hans-Günter ECKEL	[View] [Download]
Abstract: SiC MOSFET get more and more attractive also for medium and high power inverters. There wellknown advantages are low switching losses and low on-state voltage at low current. But silicon IGBTstill offer a better cost to chip area ratio. The combination of Si-IGBT and SiC-MOSFET will lead toa better performance than pure silicon inverters with less SiC chip area than full-SiC solutions. Thismight lead to a superior performance cost ratio, especially for high power inverters with large chiparea. In this paper, different two level and three level hybrid topologies are investigated. Theswitching behavior of these Si-SiC-hybrids is experimental investigated, the maximum output powerand the efficiency is compared with full Si and full SiC inverters.

	Robustness of SiC Trench MOSFETs By Christian FELGEMACHER	[View] [Download]
Abstract: In this presentation aspects regarding the robustness of state of the art SiC Trench MOSFETs will bediscussed. Results of short circuit test results on discrete devices as well as modules using multipleparallel SiC MOSFETs will be shown alongside measurements that demonstrate the timely detection and safe turn-off of both short-circuit type I and type II. As an additional aspect of device robustness results of cosmic radiation robustness tests executed on SiC MOSFETs will be presented.