| Abstract |
SiC MOSFET get more and more attractive also for medium and high power inverters. There wellknown advantages are low switching losses and low on-state voltage at low current. But silicon IGBTstill offer a better cost to chip area ratio. The combination of Si-IGBT and SiC-MOSFET will lead toa better performance than pure silicon inverters with less SiC chip area than full-SiC solutions. Thismight lead to a superior performance cost ratio, especially for high power inverters with large chiparea. In this paper, different two level and three level hybrid topologies are investigated. Theswitching behavior of these Si-SiC-hybrids is experimental investigated, the maximum output powerand the efficiency is compared with full Si and full SiC inverters. |
