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Robustness of SiC Trench MOSFETs
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| Author(s) |
Christian FELGEMACHER |
| Abstract |
In this presentation aspects regarding the robustness of state of the art SiC Trench MOSFETs will bediscussed. Results of short circuit test results on discrete devices as well as modules using multipleparallel SiC MOSFETs will be shown alongside measurements that demonstrate the timely detection and safe turn-off of both short-circuit type I and type II. As an additional aspect of device robustness results of cosmic radiation robustness tests executed on SiC MOSFETs will be presented. |
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| Filename: | 0578-epe2022-full-14070579.pdf |
| Filesize: | 121.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2023-09-24 by System |
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