EPE Association: EPE 2020 - DS2a-1: Active Devices and Components-1

EPE 2020 - DS2a-1: Active Devices and Components-1
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS2a-1: Active Devices and Components-1

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   Electrothermal Modeling of GaN Power Transistor for High Frequency Power Converter Design
By Loris PACE [View]
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Abstract: This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated.

   Experimental And Numerical Characterization Of PCB-Embedded Power Dies Using Solderless Pressed Metal Foam
By Said BENSEBAA [View]
[Download]

Abstract: A new process of embedding power die on PCB is presented which consists on removing wire bonding and solder and using only a pressed metal foam to connect the top and bottom sides of the die. First, the manufacturing process is described. Then the effective electrical, thermal and mechanical properties of the mixture made of the foam impregnated by resin insuring the contacts between die and PCB are identified experimentally and numerically. Finally, 3D FEM simulations are performed to estimate the electrical contacts resistances between foam and pads of the die within the package.

   Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions
By Benedikt KOHLHEPP [View]
[Download]

Abstract: GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.

   Performance Improvement for Plug-In Reverse Conducting IGBTs through Gate-Voltage Observation
By Daniel LEXOW [View]
[Download]

Abstract: While driving a plug-in RC-IGBT, the performance outcome can be significantly improved by adapting the turn- off process. Hereby, the observation of the characteristic gate-voltage behavior allows the distinction between IGBT and diode turn-off. Latter can be easily manipulated in order to utilize the full potential of the inverter locking time.

   Plasma Impact on Overvoltage Short-Circuit Failures in ANPC Converters
By David HAMMES [View]
[Download]

Abstract: Three-level converters experience more complex short-circuit patterns than the standard four types of semiconductor failures for IGBT and / or diode. In literature, there is a special pattern described where three semiconductors in series suffer due to an overvoltage protection that interferes. This happens for saving one of the switches from or against overvoltage in certain situations. However, it is possible that plasma, the free charge carriers inside the semiconductor, is still inside a fourth one as a result of previous switching actions. This allows a second parallel path and impacts the first one. Besides, the plasma itself dissipates over time, which further changes the trend of voltages and currents for the short-circuit situation.

EPE 2020 - DS2a-1: Active Devices and Components-1
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS2a-1: Active Devices and Components-1
	[return to parent folder]

	Electrothermal Modeling of GaN Power Transistor for High Frequency Power Converter Design By Loris PACE	[View] [Download]
Abstract: This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated.

	Experimental And Numerical Characterization Of PCB-Embedded Power Dies Using Solderless Pressed Metal Foam By Said BENSEBAA	[View] [Download]
Abstract: A new process of embedding power die on PCB is presented which consists on removing wire bonding and solder and using only a pressed metal foam to connect the top and bottom sides of the die. First, the manufacturing process is described. Then the effective electrical, thermal and mechanical properties of the mixture made of the foam impregnated by resin insuring the contacts between die and PCB are identified experimentally and numerically. Finally, 3D FEM simulations are performed to estimate the electrical contacts resistances between foam and pads of the die within the package.

	Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions By Benedikt KOHLHEPP	[View] [Download]
Abstract: GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.

	Performance Improvement for Plug-In Reverse Conducting IGBTs through Gate-Voltage Observation By Daniel LEXOW	[View] [Download]
Abstract: While driving a plug-in RC-IGBT, the performance outcome can be significantly improved by adapting the turn- off process. Hereby, the observation of the characteristic gate-voltage behavior allows the distinction between IGBT and diode turn-off. Latter can be easily manipulated in order to utilize the full potential of the inverter locking time.

	Plasma Impact on Overvoltage Short-Circuit Failures in ANPC Converters By David HAMMES	[View] [Download]
Abstract: Three-level converters experience more complex short-circuit patterns than the standard four types of semiconductor failures for IGBT and / or diode. In literature, there is a special pattern described where three semiconductors in series suffer due to an overvoltage protection that interferes. This happens for saving one of the switches from or against overvoltage in certain situations. However, it is possible that plasma, the free charge carriers inside the semiconductor, is still inside a fourth one as a result of previous switching actions. This allows a second parallel path and impacts the first one. Besides, the plasma itself dissipates over time, which further changes the trend of voltages and currents for the short-circuit situation.