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Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions
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Author(s) |
Benedikt KOHLHEPP |
Abstract |
GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification. |
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Filename: | 0053-epe2020-full-08404176.pdf |
Filesize: | 1.082 MB |
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Type |
Members Only |
Date |
Last modified 2021-01-18 by System |
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