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   Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions   [View] 
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 Author(s)   Benedikt KOHLHEPP 
 Abstract   GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification. 
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Filename:0053-epe2020-full-08404176.pdf
Filesize:1.082 MB
 Type   Members Only 
 Date   Last modified 2021-01-18 by System