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Electrothermal Modeling of GaN Power Transistor for High Frequency Power Converter Design
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| Author(s) |
Loris PACE |
| Abstract |
This work proposes the electrothermal modeling of a packaged GaN power transistor in order to evaluate by simulation its performances in a 200 W - 1 MHz DC/DC converter. The complete electrical modeling of the high frequency converter using EM-circuit co-simulations is presented. After validation of the GaN transistor switchings waveforms and estimation of power losses, the operating temperature of the device is simulated and experimentally validated. |
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| Filename: | 0353-epe2020-full-00154668.pdf |
| Filesize: | 1.943 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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