EPE Association: EPE 2019 - LS1a: Wide Bandgap Devices

EPE 2019 - LS1a: Wide Bandgap Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2019 ECCE Europe - Conference > EPE 2019 - Topic 01: Devices, Packaging and System Integration > EPE 2019 - LS1a: Wide Bandgap Devices

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   650 V SiC Trench MOSFET for high-efficiency power supplies
By Ralf SIEMIENIEC [View]
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Abstract: This work introduces a new SiC Trench MOSFET technology with 650 V nominal blocking voltage. The technology is tailored to address the needs of power supplies in the power range from several hundred watts to some tens of kilowatts including server and telecom switch-mode power supply (SMPS), solar inverters and electric-vehicle charging. These applications benefit strongly from power semiconductors that serve high switching frequencies, enable fast switching under hard-switching conditions, and provide low conduction losses as well as a small output and reverse-recovery charge. The MOSFET technology introduced enables new, highly efficient topologies such as the full-bridge totem-pole in the power-factor correction (PFC) stage. The paper further presents long-term reliability data and performance evaluations indicating a possible absolute PFC stage efficiency of 99 \%. Such an efficiency is essential to gain an overall system efficiency of 98 \%.

   Mitigating Drain Source Voltage Oscillation for SiC Power MOSFETs in order to reduce Electromagnetic Interference
By Patrick HOFSTETTER [View]
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Abstract: In this paper various approaches are shown to mitigate drain source voltage oscillation at SiC MOSFET turn-off. At first, a MOSFET behavior model is presented and confirmed with measurement results. Based on this model, the suitability of oscillation mitigation methods is evaluated regarding effect, timing requirement and switching losses.

   Temperature determination of SiC MPS diodes during surge current event with measurement and simulation
By Shanmuganathan PALANISAMY [View]
[Download]

Abstract: The surge current ruggedness is an important factor for a diode in power electronic applications. The diodes will face very high temperatures during a surge current event. In this work, the temperature was determined during surge current event of SiC MPS diodes under different pulse lengths using measurement and numerical simulation. Even though SiC itself can withstand very high temperatures, the maximum operating temperature of the diode is limited by the anode metallization in TO-247 during the surge current event. The temperature distribution during the surge current event was analysed and explained in detail with help of numerical simulation of the diode model in ANSYS.

   Thermal characteristics and simulation of an integrated GaN eHEMT power module
By Asger Bjørn JØRGENSEN [View]
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Abstract: Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 \% in thermal impedance if the PCB board is not included in the simulation model.

EPE 2019 - LS1a: Wide Bandgap Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2019 ECCE Europe - Conference > EPE 2019 - Topic 01: Devices, Packaging and System Integration > EPE 2019 - LS1a: Wide Bandgap Devices
	[return to parent folder]

	650 V SiC Trench MOSFET for high-efficiency power supplies By Ralf SIEMIENIEC	[View] [Download]
Abstract: This work introduces a new SiC Trench MOSFET technology with 650 V nominal blocking voltage. The technology is tailored to address the needs of power supplies in the power range from several hundred watts to some tens of kilowatts including server and telecom switch-mode power supply (SMPS), solar inverters and electric-vehicle charging. These applications benefit strongly from power semiconductors that serve high switching frequencies, enable fast switching under hard-switching conditions, and provide low conduction losses as well as a small output and reverse-recovery charge. The MOSFET technology introduced enables new, highly efficient topologies such as the full-bridge totem-pole in the power-factor correction (PFC) stage. The paper further presents long-term reliability data and performance evaluations indicating a possible absolute PFC stage efficiency of 99 \%. Such an efficiency is essential to gain an overall system efficiency of 98 \%.

	Mitigating Drain Source Voltage Oscillation for SiC Power MOSFETs in order to reduce Electromagnetic Interference By Patrick HOFSTETTER	[View] [Download]
Abstract: In this paper various approaches are shown to mitigate drain source voltage oscillation at SiC MOSFET turn-off. At first, a MOSFET behavior model is presented and confirmed with measurement results. Based on this model, the suitability of oscillation mitigation methods is evaluated regarding effect, timing requirement and switching losses.

	Temperature determination of SiC MPS diodes during surge current event with measurement and simulation By Shanmuganathan PALANISAMY	[View] [Download]
Abstract: The surge current ruggedness is an important factor for a diode in power electronic applications. The diodes will face very high temperatures during a surge current event. In this work, the temperature was determined during surge current event of SiC MPS diodes under different pulse lengths using measurement and numerical simulation. Even though SiC itself can withstand very high temperatures, the maximum operating temperature of the diode is limited by the anode metallization in TO-247 during the surge current event. The temperature distribution during the surge current event was analysed and explained in detail with help of numerical simulation of the diode model in ANSYS.

	Thermal characteristics and simulation of an integrated GaN eHEMT power module By Asger Bjørn JØRGENSEN	[View] [Download]
Abstract: Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 \% in thermal impedance if the PCB board is not included in the simulation model.