EPE Association: 05 - Madep - M1.1

05 - Madep - M1.1 - POWER IC's 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 05 - Madep - M1.1 - POWER IC's 01

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   MEDIUM-VOLTAGE SWITCHING DEVICES COMPATIBLE WITH STANDARD CMOS TECHNOLOGY
By F. H. Behrens; G. Charitat; P. Rossel [View]
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Abstract: The feasibility and functional characteristics of medium-voltage VDMOS, LDMOS, MOS-thyristor, Transistor-Thyristor MOS (T2MOS) and Light Doped Drain P channel transistor (LDD-PMOS) devices, built in a standard CMOS P-well technology are described. The structures of such devices are derived from conventional low voltage design rules. Their voltage and current limits were calculated and the I-V characteristics were experimentally evaluated. The devices can be used as medium-voltage, medium-current output switches in low-voltage CMOS integrated circuits.

   DEVELOPING A TRUE 3D TRANSIENT THERMAL MODEL FOR POWER COMPONENTS OR HYBRID POWER CIRCUITS
By A. Napieralski; S. Tounsi; J. M. Dorkel; Ph. Leturcq [View]
[Download]

Abstract: This paper shortly recalls the basic theory of the "Thermal Influence Coefficient" method especially intended for fast thermal C.A.D. of power components or hybrid circuits. The on-going software development is presented and an application example is given. The principle of the extension of the method to time-dependent power dissipation problems is then outlined and some examples of computations are also presented. The method presented in this paper allows to compute 3D transient thermal responses on PC computers and does not necessitate prohibitive running times . So, this method is suitable for efficient and low cost thermal C.A.D.

   POWER DEVICES WITH INTEGRATED PROTECTION
By Randy Frank; Pierre Aloisi [View]
[Download]

Abstract: Several active and passive devices can be obtained from a standard power FET process that allow simple circuits to be designed that provide protection for the basic power device. The circuits that can be integrated are very simple but only require: 1) a small increase in the area to the basic power FET and 2) the addition of only one masking layer to the process. Therefore the cost impact of these circuits is only a small fraction of the total cost of the power switching device. However, the functions that can be obtained provide significant improvement in ruggedness, reliability, protection and system cost reduction. Since many of these functions are associated with smart power IC's and they can now be obtained at reduced cost, they provide designers a cost-effective alternative especially for applications requiring low on-resistance or high current. This paper will discuss temperature sensing, current sensing, gate-to-source and drain-to-gate voltage clamping that can be designed into power FETs and IGBTs as well as the performance and applications of products that incorporate these features.

05 - Madep - M1.1 - POWER IC's 01
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 05 - Madep - M1.1 - POWER IC's 01
	[return to parent folder]

	MEDIUM-VOLTAGE SWITCHING DEVICES COMPATIBLE WITH STANDARD CMOS TECHNOLOGY By F. H. Behrens; G. Charitat; P. Rossel	[View] [Download]
Abstract: The feasibility and functional characteristics of medium-voltage VDMOS, LDMOS, MOS-thyristor, Transistor-Thyristor MOS (T2MOS) and Light Doped Drain P channel transistor (LDD-PMOS) devices, built in a standard CMOS P-well technology are described. The structures of such devices are derived from conventional low voltage design rules. Their voltage and current limits were calculated and the I-V characteristics were experimentally evaluated. The devices can be used as medium-voltage, medium-current output switches in low-voltage CMOS integrated circuits.

	DEVELOPING A TRUE 3D TRANSIENT THERMAL MODEL FOR POWER COMPONENTS OR HYBRID POWER CIRCUITS By A. Napieralski; S. Tounsi; J. M. Dorkel; Ph. Leturcq	[View] [Download]
Abstract: This paper shortly recalls the basic theory of the "Thermal Influence Coefficient" method especially intended for fast thermal C.A.D. of power components or hybrid circuits. The on-going software development is presented and an application example is given. The principle of the extension of the method to time-dependent power dissipation problems is then outlined and some examples of computations are also presented. The method presented in this paper allows to compute 3D transient thermal responses on PC computers and does not necessitate prohibitive running times . So, this method is suitable for efficient and low cost thermal C.A.D.

	POWER DEVICES WITH INTEGRATED PROTECTION By Randy Frank; Pierre Aloisi	[View] [Download]
Abstract: Several active and passive devices can be obtained from a standard power FET process that allow simple circuits to be designed that provide protection for the basic power device. The circuits that can be integrated are very simple but only require: 1) a small increase in the area to the basic power FET and 2) the addition of only one masking layer to the process. Therefore the cost impact of these circuits is only a small fraction of the total cost of the power switching device. However, the functions that can be obtained provide significant improvement in ruggedness, reliability, protection and system cost reduction. Since many of these functions are associated with smart power IC's and they can now be obtained at reduced cost, they provide designers a cost-effective alternative especially for applications requiring low on-resistance or high current. This paper will discuss temperature sensing, current sensing, gate-to-source and drain-to-gate voltage clamping that can be designed into power FETs and IGBTs as well as the performance and applications of products that incorporate these features.