| Abstract |
The feasibility and functional characteristics of medium-voltage VDMOS, LDMOS, MOS-thyristor, Transistor-Thyristor MOS (T2MOS) and Light Doped Drain P channel transistor (LDD-PMOS) devices, built in a standard CMOS P-well technology are described. The structures of such devices are derived from conventional low voltage design rules. Their voltage and current limits were calculated and the I-V characteristics were experimentally evaluated. The devices can be used as medium-voltage, medium-current output switches in low-voltage CMOS integrated circuits. |
