EPE Association: EPE 1993 - 37 - Dialogue Session DS2.2: DEVICES: MODELLING

EPE 1993 - 37 - Dialogue Session DS2.2: DEVICES: MODELLING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 37 - Dialogue Session DS2.2: DEVICES: MODELLING

   [return to parent folder]

   Analysis of Switching Behavior of the Power Insulated Gate Bipolar Transistor by Soft Modeling
By J. M. Li; D. Lafore; J. Arnould; B. Reymond [View]
[Download]

Abstract: A soft modeling method of the Power Insulated Gate Bipolar Transistor (IGBT) bas been developed. The model described ( also called "soft model") is based on simplified one-dimensional semiconductor pbysics and is suitable for commutation analysis. The soft model is a quantitative method for studying component switching performance and is intended to help the power electronics engineer to make the best use of the device. The inductive load switching-off behavior is presented as an example of the results and we show the influence of the drive (Rg , Vg ) for a given load condition and that of the load circuit (IL ,VL ) for a given drive on the switching times and losses.

   NEW IGBT MODEL FOR PSPICE
By F.-F. Protiwa; O. Apeldoorn; N. Groos [View]
[Download]

Abstract: In recent years the IGBT bas been widely used in new power electronics applications. At the same time the importance of simulation in power electronics grew up. Most of the simulation programs do not include models of the IGBT. This paper presents a new approach to the IGBT that is based on existing built-in models of PSpice. The parameters needed can be specified by data sheet values and by measurement. The calculations of these parameters are derived from the physical equations describing the IGBT. Comparison between measurement and simulation shows good agreement in transient and steady-state behaviour.

   A MODEL OF GTO COMPATIBLE WITH POWER CIRCUIT SIMULATION
By C. Alonso; T. A. Meynard; H. Foch; C. Batard; H. Piquet [View]
[Download]

Abstract: In the field of power device simulation., different approaches can be found. Our purpose is to find models able to represent both the static and dynamic behaviour of semiconductors taking account of the external circuit (i chopper or inverter operation). These models should be of the "circuit" type to be compatible with a simulation software capable of handling whole converters, like, in our case, SUCCESS. Our models for minority carrier devices are based on their physical structure. Each junction of the component is represented by a standard junction model. The model of each component is then derived as a combination of these junction models. In this paper, we will focus on the modelling of the GTO which is a three-junction device. First, we will identify the parameters of each junction with specific tests which will be detailed. Then, the behaviour of the model will be compared with experimental results in conventional conditions.

   IMPLEMENTATION, CHARACTERISATION AND REFINEMENT OF A GTO MODEL
By D. M. Smith; H. Zelaya; C. M. Goodman [View]
[Download]

Abstract: This paper demonstrates the use of an equivalent circuit model for the simulation of the gate turn off (GTO) thyristor in power electronic circuits. The equivalent circuit consists of subcircuit elements which exhibit highly non-linear behavioural characteristics, however using the equation solving techniques available with the Saber simulator these problems are overcome. An important factor in a successful GTO model is the ability to determine easily the model parameters, ideally from the data sheet information alone, procedures are outlined which enable this, using both direct calculations and simulator 'sweep' facilities. Finally, circuit simulation results are presented, showing switching waveforms of the GTO; Vak, Ia, Vgk and Ig.

   AN ACCURATE GTO MODEL FOR CIRCUIT SIMULATIONS
By P. R. Palmer; K. J. Tseng [View]
[Download]

Abstract: The GTO model presented in this paper uses analytical expressions to describe the intemal physics of the device. It bas been implememed to run as compiled code in the SPICE simulation package and as a MAST template in the Saber simulator. A rigorous comparison of measured simulated waveforms and performance parameters (including turn-off energies) for a 3000A device is described and discussed.

   AN IMPROVED POWER DIODE MODEL FOR PSPICE, APPLIED TO CONVERTER SIMULATION
By F. Bertha; B. Velaert; P. Mathys; E. Tatakis; A. Wyns; D. Bogaerts; M. Miller [View]
[Download]

Abstract: This paper presents an improved and simplified model to simulate the soft recovery of the power diode in simulations using PSPICE. The new model is demonstrated by a two-MOSFET forward DC-DC converter. The soft recovery of the power diode is simulated by means of an external circuit injecting an exponential current with a time constant L/R, to palliate the missing soft recovery current of the PSPICE diode model. This circuit has been substantially improved, compared with previously published works, by replacing the controlling elements (ideal diodes and fets) by a single controlled resistor, also used in the L/R operation. Computing times are significantly reduced, and the convergence problems occurring with the growing complexity of the topologies are brought down to a further limit. The paper confronts simulations and measurements on a basic chopper with inductive load, and on the aforementioned forward converter.

EPE 1993 - 37 - Dialogue Session DS2.2: DEVICES: MODELLING
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 37 - Dialogue Session DS2.2: DEVICES: MODELLING
	[return to parent folder]

	Analysis of Switching Behavior of the Power Insulated Gate Bipolar Transistor by Soft Modeling By J. M. Li; D. Lafore; J. Arnould; B. Reymond	[View] [Download]
Abstract: A soft modeling method of the Power Insulated Gate Bipolar Transistor (IGBT) bas been developed. The model described ( also called "soft model") is based on simplified one-dimensional semiconductor pbysics and is suitable for commutation analysis. The soft model is a quantitative method for studying component switching performance and is intended to help the power electronics engineer to make the best use of the device. The inductive load switching-off behavior is presented as an example of the results and we show the influence of the drive (Rg , Vg ) for a given load condition and that of the load circuit (IL ,VL ) for a given drive on the switching times and losses.

	NEW IGBT MODEL FOR PSPICE By F.-F. Protiwa; O. Apeldoorn; N. Groos	[View] [Download]
Abstract: In recent years the IGBT bas been widely used in new power electronics applications. At the same time the importance of simulation in power electronics grew up. Most of the simulation programs do not include models of the IGBT. This paper presents a new approach to the IGBT that is based on existing built-in models of PSpice. The parameters needed can be specified by data sheet values and by measurement. The calculations of these parameters are derived from the physical equations describing the IGBT. Comparison between measurement and simulation shows good agreement in transient and steady-state behaviour.

	A MODEL OF GTO COMPATIBLE WITH POWER CIRCUIT SIMULATION By C. Alonso; T. A. Meynard; H. Foch; C. Batard; H. Piquet	[View] [Download]
Abstract: In the field of power device simulation., different approaches can be found. Our purpose is to find models able to represent both the static and dynamic behaviour of semiconductors taking account of the external circuit (i chopper or inverter operation). These models should be of the "circuit" type to be compatible with a simulation software capable of handling whole converters, like, in our case, SUCCESS. Our models for minority carrier devices are based on their physical structure. Each junction of the component is represented by a standard junction model. The model of each component is then derived as a combination of these junction models. In this paper, we will focus on the modelling of the GTO which is a three-junction device. First, we will identify the parameters of each junction with specific tests which will be detailed. Then, the behaviour of the model will be compared with experimental results in conventional conditions.

	IMPLEMENTATION, CHARACTERISATION AND REFINEMENT OF A GTO MODEL By D. M. Smith; H. Zelaya; C. M. Goodman	[View] [Download]
Abstract: This paper demonstrates the use of an equivalent circuit model for the simulation of the gate turn off (GTO) thyristor in power electronic circuits. The equivalent circuit consists of subcircuit elements which exhibit highly non-linear behavioural characteristics, however using the equation solving techniques available with the Saber simulator these problems are overcome. An important factor in a successful GTO model is the ability to determine easily the model parameters, ideally from the data sheet information alone, procedures are outlined which enable this, using both direct calculations and simulator 'sweep' facilities. Finally, circuit simulation results are presented, showing switching waveforms of the GTO; Vak, Ia, Vgk and Ig.

	AN ACCURATE GTO MODEL FOR CIRCUIT SIMULATIONS By P. R. Palmer; K. J. Tseng	[View] [Download]
Abstract: The GTO model presented in this paper uses analytical expressions to describe the intemal physics of the device. It bas been implememed to run as compiled code in the SPICE simulation package and as a MAST template in the Saber simulator. A rigorous comparison of measured simulated waveforms and performance parameters (including turn-off energies) for a 3000A device is described and discussed.

	AN IMPROVED POWER DIODE MODEL FOR PSPICE, APPLIED TO CONVERTER SIMULATION By F. Bertha; B. Velaert; P. Mathys; E. Tatakis; A. Wyns; D. Bogaerts; M. Miller	[View] [Download]
Abstract: This paper presents an improved and simplified model to simulate the soft recovery of the power diode in simulations using PSPICE. The new model is demonstrated by a two-MOSFET forward DC-DC converter. The soft recovery of the power diode is simulated by means of an external circuit injecting an exponential current with a time constant L/R, to palliate the missing soft recovery current of the PSPICE diode model. This circuit has been substantially improved, compared with previously published works, by replacing the controlling elements (ideal diodes and fets) by a single controlled resistor, also used in the L/R operation. Computing times are significantly reduced, and the convergence problems occurring with the growing complexity of the topologies are brought down to a further limit. The paper confronts simulations and measurements on a basic chopper with inductive load, and on the aforementioned forward converter.