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Analysis of Switching Behavior of the Power Insulated Gate Bipolar Transistor by Soft Modeling
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| Author(s) |
J. M. Li; D. Lafore; J. Arnould; B. Reymond |
| Abstract |
A soft modeling method of the Power Insulated Gate Bipolar Transistor (IGBT) bas been developed. The model described ( also called "soft model") is based on simplified one-dimensional semiconductor pbysics and is suitable for commutation analysis. The soft model is a quantitative method for studying component switching performance and is intended to help the power electronics engineer to make the best use of the device. The inductive load switching-off behavior is presented as an example of the results and we show the influence of the drive (Rg , Vg ) for a given load condition and that of the load circuit (IL ,VL ) for a given drive on the switching times and losses. |
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| Filename: | Unnamed file |
| Filesize: | 3.862 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-16 by System |
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