| Abstract |
In the field of power device simulation., different approaches can be found. Our purpose is to find models able to represent both the static and dynamic behaviour of semiconductors taking account of the external circuit (i chopper or inverter operation). These models should be of the "circuit" type to be compatible with a simulation software capable of handling whole converters, like, in our case, SUCCESS. Our models for minority carrier devices are based on their physical structure. Each junction of the component is represented by a standard junction model. The model of each component is then derived as a combination of these junction models. In this paper, we will focus on the modelling of the GTO which is a three-junction device. First, we will identify the parameters of each junction with specific tests which will be detailed. Then, the
behaviour of the model will be compared with experimental results in conventional conditions. |
