EPE Association: EPE 2018 - LS3b: Measurement Techniques for Power Devices

EPE 2018 - LS3b: Measurement Techniques for Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 03: Measurement and Control > EPE 2018 - LS3b: Measurement Techniques for Power Devices

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   Experimental Comparison and 3D FEM based Optimization of Current Measurement Methods for GaN Switching Characterization
By Jan BOECKER [View]
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Abstract: Three high bandwidth current measurement methods to acquire fast switching transients with GaN HEMTs are compared. A 3D FEM (finite element method) simulation is used for analysis and optimization of a very low inductive SMD shunt. The focus is on the use of an FEM simulation in order to adapt the current measurement method to the requirements for GaN HEMTs characterization. The simulation results and optimizations are verified with experimental results. In conclusion, the optimized SMD shunt achieves a high bandwidth (> 500 MHz) with a very small additional inductance in the power loop.

   Extracting Large-Signal Transient Characteristics of Power Electronic Devices Using Nanosecond Pulsing Techniques
By Dennis HELMUT [View]
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Abstract: With faster technologies like SiC and GaN, the transient behavior of switching power devices, modules,and systems becomes increasingly important. The presented methodology uses Transmission Line Pulsingto extract the large-signal transient characteristics of power devices and involved parasitics from theirnanosecond pulse response on package and board level.

   Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate
By Thomas LORIN [View]
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Abstract: Dynamic Ron measurements and substrate ramping characterization have been performed onGaN-based Schottky diodes and TLM test structures with different back barrier configurations.Parameters such as channel length, ramp rate and temperature have been tested to improve theunderstanding of back barrier screening effect on the device dynamic behavior.

   Switching Loss Characterization of Wide Band-Gap Devices by an Indirect Identification Methodology
By Lukas KEUCK [View]
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Abstract: The Double Pulse Test is commonly used to measure switching losses of power electronic devices. This method suffers from fast transients, design changes for the current measurement and unclear integration limits. Furthermore, the measured switching losses are invalid for soft-switching operation modes. In this paper, an indirect method is presented, which identifies the switching losses from the total losses of a two quadrant converter operated at various operation points. The proposed method fixes the issues of the Double Pulse Test mentioned above. The method was employed to compare the switching performance of a SiC-MOSFET with new GaN-device in the 900 V-class. The comparison revealed that the GaN component performs slightly better for soft switching, while the SiC device is the better choice for hard-switching.

EPE 2018 - LS3b: Measurement Techniques for Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 03: Measurement and Control > EPE 2018 - LS3b: Measurement Techniques for Power Devices
	[return to parent folder]

	Experimental Comparison and 3D FEM based Optimization of Current Measurement Methods for GaN Switching Characterization By Jan BOECKER	[View] [Download]
Abstract: Three high bandwidth current measurement methods to acquire fast switching transients with GaN HEMTs are compared. A 3D FEM (finite element method) simulation is used for analysis and optimization of a very low inductive SMD shunt. The focus is on the use of an FEM simulation in order to adapt the current measurement method to the requirements for GaN HEMTs characterization. The simulation results and optimizations are verified with experimental results. In conclusion, the optimized SMD shunt achieves a high bandwidth (> 500 MHz) with a very small additional inductance in the power loop.

	Extracting Large-Signal Transient Characteristics of Power Electronic Devices Using Nanosecond Pulsing Techniques By Dennis HELMUT	[View] [Download]
Abstract: With faster technologies like SiC and GaN, the transient behavior of switching power devices, modules,and systems becomes increasingly important. The presented methodology uses Transmission Line Pulsingto extract the large-signal transient characteristics of power devices and involved parasitics from theirnanosecond pulse response on package and board level.

	Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate By Thomas LORIN	[View] [Download]
Abstract: Dynamic Ron measurements and substrate ramping characterization have been performed onGaN-based Schottky diodes and TLM test structures with different back barrier configurations.Parameters such as channel length, ramp rate and temperature have been tested to improve theunderstanding of back barrier screening effect on the device dynamic behavior.

	Switching Loss Characterization of Wide Band-Gap Devices by an Indirect Identification Methodology By Lukas KEUCK	[View] [Download]
Abstract: The Double Pulse Test is commonly used to measure switching losses of power electronic devices. This method suffers from fast transients, design changes for the current measurement and unclear integration limits. Furthermore, the measured switching losses are invalid for soft-switching operation modes. In this paper, an indirect method is presented, which identifies the switching losses from the total losses of a two quadrant converter operated at various operation points. The proposed method fixes the issues of the Double Pulse Test mentioned above. The method was employed to compare the switching performance of a SiC-MOSFET with new GaN-device in the 900 V-class. The comparison revealed that the GaN component performs slightly better for soft switching, while the SiC device is the better choice for hard-switching.