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Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate
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| Author(s) |
Thomas LORIN |
| Abstract |
Dynamic Ron measurements and substrate ramping characterization have been performed onGaN-based Schottky diodes and TLM test structures with different back barrier configurations.Parameters such as channel length, ramp rate and temperature have been tested to improve theunderstanding of back barrier screening effect on the device dynamic behavior. |
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| Filename: | 0132-epe2018-full-08582353.pdf |
| Filesize: | 615.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2019-05-05 by System |
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