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   Extracting Large-Signal Transient Characteristics of Power Electronic Devices Using Nanosecond Pulsing Techniques   [View] 
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 Author(s)   Dennis HELMUT 
 Abstract   With faster technologies like SiC and GaN, the transient behavior of switching power devices, modules,and systems becomes increasingly important. The presented methodology uses Transmission Line Pulsingto extract the large-signal transient characteristics of power devices and involved parasitics from theirnanosecond pulse response on package and board level. 
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Filename:0201-epe2018-full-14414436.pdf
Filesize:929.4 KB
 Type   Members Only 
 Date   Last modified 2019-05-05 by System