Extracting Large-Signal Transient Characteristics of Power Electronic Devices Using Nanosecond Pulsing Techniques | ||||||
Author(s) | Dennis HELMUT | |||||
Abstract | With faster technologies like SiC and GaN, the transient behavior of switching power devices, modules,and systems becomes increasingly important. The presented methodology uses Transmission Line Pulsingto extract the large-signal transient characteristics of power devices and involved parasitics from theirnanosecond pulse response on package and board level. | |||||
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Type | Members Only | |||||
Date | Last modified 2019-05-05 by System | |||||
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